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An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes 使用TiSi2电极的AlGaN/GaN结构的欧姆接触工艺
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695586
M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito
{"title":"An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes","authors":"M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito","doi":"10.1109/WIPDA.2013.6695586","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695586","url":null,"abstract":"We report an Ohmic contact process using TiSi2 electrodes for contact metals on AlGaN/GaN structures. TiSi2 films have been formed by cyclic deposition of Ti and Si layers by sputtering and annealing. Cross-sectional TEM image of the sample annealed has revealed a formation of an interfacial layer above AlGaN layer, however, no intrusion of Ti or Si atoms has been observed at dislocation. Specific contact resistance on annealing time showed gradual reduction with longer time. Therefore, TiSi2 can be a candidate as a contact material for AlGaN/GaN structures independent to dislocation density of epiwafers.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132316382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Performance and robustness of first generation 600-V GaN-on-Si power transistors 第一代600 v GaN-on-Si功率晶体管的性能和稳健性
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695551
Y. Wu, J. Gritters, L. Shen, R. Smith, J. McKay, R. Barr, R. Birkhahn
{"title":"Performance and robustness of first generation 600-V GaN-on-Si power transistors","authors":"Y. Wu, J. Gritters, L. Shen, R. Smith, J. McKay, R. Barr, R. Birkhahn","doi":"10.1109/WIPDA.2013.6695551","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695551","url":null,"abstract":"Industry's first 600-V GaN-on-Si switching transistors have passed qualification based on Jedec standards and entered commercial market. Although far from being optimized, these 1st generation GaN devices exhibit properties superior to matured Si counterparts including lower on-resistance, much reduced input/output charges, and much higher switching speed. Application examples show significant loss reduction at high frequencies and markedly simplified hard-switched bridge circuits, offering a new means for designing more compact and efficient power systems. Extended SOA tests revealed a large margin in blocking voltage even at 175 °C, ability to deliver 99% peak efficiency at 187°C case temperature and high power operation at 215°C junction temperature with a very-low degradation rate.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123420811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
A cross batch characterization of GaN HEMT devices for power electronics applications 用于电力电子应用的GaN HEMT器件的交叉批表征
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695589
Jeffrey M. Aggas, Luke L. Jenkins, C. Wilson, J. Moses, William E. Abell, Benjamin K. Rhea, R. Dean
{"title":"A cross batch characterization of GaN HEMT devices for power electronics applications","authors":"Jeffrey M. Aggas, Luke L. Jenkins, C. Wilson, J. Moses, William E. Abell, Benjamin K. Rhea, R. Dean","doi":"10.1109/WIPDA.2013.6695589","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695589","url":null,"abstract":"Modern switch-mode power supply (SMPS) applications have embraced the benefits realized through the use of gallium nitride (GaN) HEMT technology as it allows switching speeds to increase drastically with respect to silicon parts. Since GaN HEMT devices are a relatively new technology in the power electronics realm, the manufacturing processes have not been perfected to the extent that silicon processes have been. Inconsistent RDS(ON) characteristics across manufactured batches can cause device failure as well as an imbalance in current distribution if the devices are used in a parallel fashion. The device of interest in this work is the Efficient Power Conversion (EPC) 2015 GaN HEMT. Five batches manufactured approximately six months apart are characterized. Manufacturing reliability analysis is presented and the results are compared with the device characteristics provided by EPC.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125356441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Research and development on Ga2O3 transistors and diodes Ga2O3晶体管及二极管的研究与开发
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695572
M. Higashiwaki, K. Sasaki, M. Wong, T. Kamimura, D. Krishnamurthy, A. Kuramata, T. Masui, S. Yamakoshi
{"title":"Research and development on Ga2O3 transistors and diodes","authors":"M. Higashiwaki, K. Sasaki, M. Wong, T. Kamimura, D. Krishnamurthy, A. Kuramata, T. Masui, S. Yamakoshi","doi":"10.1109/WIPDA.2013.6695572","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695572","url":null,"abstract":"New widegap compound semiconductor gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) power devices have been attracted as strong candidates for future power electronics. Here, we will introduce material properties, productivity of Ga<sub>2</sub>O<sub>3</sub>, and current status of research and development on its transistors and diodes.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126530459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hard switching speed improvements in GaN-based synchronous buck converters 基于氮化镓的同步降压变换器的硬开关速度改进
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695595
C. Wilson, Luke L. Jenkins, J. Moses, Jeffrey M. Aggas, R. Dean
{"title":"Hard switching speed improvements in GaN-based synchronous buck converters","authors":"C. Wilson, Luke L. Jenkins, J. Moses, Jeffrey M. Aggas, R. Dean","doi":"10.1109/WIPDA.2013.6695595","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695595","url":null,"abstract":"In designing high efficiency, large step down buck converters, the power semiconductors contribute a significant loss mechanism through switching losses. Minimizing these losses can be achieved by running at lower frequencies, decreasing the actual switching time, or performing soft switching. However, soft switching converters introduce extra components, which can impact reliability, cost, and size of the final converters. Therefore, extremely rapid hard switching is preferable to soft switching converters. This paper proposes a new layout technique for low parasitic inductance paths using commercially standard PCB specifications for very fast switching speeds of GaN power devices in flip-chip packages resulting in a highly efficient (>94%) hard switching 12-1 V synchronous buck converter. The proposed technique is experimentally verified at output loads from 4 - 20 A and achieves less than 5 ns switching times.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116617380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 氮化Si3N4钝化层性质对常关AlGaN/GaN HEMT电学特性的影响
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695587
F. Iucolano, C. Miccoli, M. Nicotra, A. Stocco, F. Rampazzo, A. Zanandrea, Martino V. Cinnera, A. Patti, S. Rinaudo, F. Soci, A. Chini, E. Zanoni, G. Meneghesso
{"title":"Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT","authors":"F. Iucolano, C. Miccoli, M. Nicotra, A. Stocco, F. Rampazzo, A. Zanandrea, Martino V. Cinnera, A. Patti, S. Rinaudo, F. Soci, A. Chini, E. Zanoni, G. Meneghesso","doi":"10.1109/WIPDA.2013.6695587","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695587","url":null,"abstract":"In this paper a comparison between two samples with two different SiN passivation layers was performed. An increment of the drain leakage current increasing the Si concentration in the SiN layer was observed. On the other hand, a similar behavior of dynamic RON was recorded. T-CAD simulations supported our hypothesis on the factors that cause parametric yield loss.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124764892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Physics of SiC MOS interface and development of trench MOSFETs SiC MOS界面的物理特性及沟槽mosfet的发展
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695580
T. Kimoto, H. Yoshioka, Takashi Nakamura
{"title":"Physics of SiC MOS interface and development of trench MOSFETs","authors":"T. Kimoto, H. Yoshioka, Takashi Nakamura","doi":"10.1109/WIPDA.2013.6695580","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695580","url":null,"abstract":"An original method to accurately evaluate the MOS interface state density has been proposed. Characterization using this method has revealed that a high density of fast states is generated by interface nitridation of SiC(0001), though the density of slow interface states can be remarkably reduced by the nitridation. The generation of fast states is less pronounced on non-basal planes of SiC, and high channel mobilities over 100 cm2/Vs are obtained for MOSFETs fabricated on Al+-implanted SiC(11-20) and (1-100). We also proposed a novel design of “double-trench” MOSFET, which is effective to alleviate the electric field crowding at the gate oxide near the trench bottom. Based on these fundamental investigations combined with advanced device technology, we achieved a very low on-resistance of 0.79 mΩcm2 for a 630 V SiC trench MOSFET (normally off).","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114429418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Characterization and performance comparison of reverse blocking SiC and Si based switch 反向阻断SiC与Si开关的特性与性能比较
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695567
A. De, Sudhin Roy, S. Bhattacharya, D. Divan
{"title":"Characterization and performance comparison of reverse blocking SiC and Si based switch","authors":"A. De, Sudhin Roy, S. Bhattacharya, D. Divan","doi":"10.1109/WIPDA.2013.6695567","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695567","url":null,"abstract":"In this paper a custom made Reverse Voltage Blocking 1200V SiC switch or “current switch” (1200V SiC MOSFET in series with a 1200V SiC JBS diode) is compared with various other combinations of Reverse Voltage Blocking switches (with 1200V Si-IGBT, SiC MOSFET and Si-PIN diodes and SiC JBS diodes). The devices are tested under Reverse Voltage Commutation, Switch Overlap (turn on at non-zero current but zero voltage) and Hard Switching conditions. Test circuits have been constructed and tested at different dc voltage levels with various combinations of devices. The custom made current switch results show remarkable reduction of loss owing to reduced leakage inductance of the package. A new form of switching characteristic has been noticed and presented in this paper. The main motivation of the paper is to make a fair judgment on device selection for current stiff based hard and soft switching topologies.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114197782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A 2 kW Gallium Nitride based switched capacitor three-port inverter 一个2kw基于氮化镓的开关电容三端口逆变器
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695577
Cong Li, Da Jiao, M. Scott, Chengcheng Yao, Lixing Fu, Xintong Lu, Titus Chen, Jinzhu Li, Jin Wang
{"title":"A 2 kW Gallium Nitride based switched capacitor three-port inverter","authors":"Cong Li, Da Jiao, M. Scott, Chengcheng Yao, Lixing Fu, Xintong Lu, Titus Chen, Jinzhu Li, Jin Wang","doi":"10.1109/WIPDA.2013.6695577","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695577","url":null,"abstract":"This paper presents a single phase, multilevel, three-port, switched capacitor inverter based on Gallium Nitride (GaN) devices from Transphorm. The features of this inverter include one 200 V dc port, and two ac ports, which are two-level 120 V (1X inverter) and three-level 240 V (2X inverter), respectively. This circuit harness the superior characteristics of GaN devices, especially their faster switching speed and lower on resistance, to reduce the passive components size, increase overall power density, and achieve multiport operation. In this paper, complete circuit description, operation principles and device evaluation are provided. Also, to verify proposed functions, a 2 kW prototype has been built and the preliminary testing results have shown a 98.5% peak efficiency with two ac outputs.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131378530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Recent development in flourine-ion-implanted GaN-based heterojunction power devices 氟离子注入氮化镓基异质结功率器件的研究进展
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695570
K. J. Chen, A. Kwan, Zhikai Tang
{"title":"Recent development in flourine-ion-implanted GaN-based heterojunction power devices","authors":"K. J. Chen, A. Kwan, Zhikai Tang","doi":"10.1109/WIPDA.2013.6695570","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695570","url":null,"abstract":"In this paper, we report recent progress in the development of the fluorine ion implantation (F-implantation) technique for fabricating enhancement-mode (E-mode) GaN heterojunction power transistors. An integrated gate protection technique and a MIS-HEMT technology have been developed in order to improve the device reliability and make the E-mode GaN power transistors more compatible with standard gate drive ICs that demand large gate swing and low gate leakage. By embedding a small depletion-mode (D-mode) HEMT to the gate electrode, a high-voltage Schottky-gate E-mode HEMT can sustain large input-gate voltage swing (> 20 V) without gate failure and observable shift in the threshold voltage. This gate protection scheme introduces negligible degradation to the switching performance in MHz range, and thus, is suitable for most of the targeted applications of GaN power switches. By integrating the F-implantation technique with SiNx gate dielectric, high-performance 600 V normally-off GaN MIS-HEMTs with large gate swing, low current collapse and good threshold voltage stability are successfully demonstrated.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130999539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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