发布求助
文献互助 智能选刊 最新文献

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications最新文献

筛选
英文 中文
The change in on-resistance in GaN HEMTs operating in a buck configuration 在降压配置下工作的GaN hemt的导通电阻变化
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695588
William E. Abell, Jeffrey M. Aggas, Luke L. Jenkins, C. Wilson, R. Dean
{"title":"The change in on-resistance in GaN HEMTs operating in a buck configuration","authors":"William E. Abell, Jeffrey M. Aggas, Luke L. Jenkins, C. Wilson, R. Dean","doi":"10.1109/WIPDA.2013.6695588","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695588","url":null,"abstract":"In this paper the change in on resistance found in GaN HEMTs is discussed. This test was composed to ensure we have a consistent RDS(ON). The interest exists to determine if the efficiency drops due to conduction losses and ensure the longevity of the part [1]. The EPCs 2015 HEMTs were tested in a buck converting configuration under a 10A load. RDS(ON) of MOSFETs directly impact converter efficiency. GaN MOSFETs have a characteristic called dynamicRDS(ON). Prolonged use of previous generations GaN FETs resulted in an increase in the devices on-resistance, reducing the overall converter efficiency. The efficiency is reduced due to conduction losses, dissipating power as heat [2].","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133607556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Control of insulated gate interfaces on AlGaN/GaN heterostructures for power devices 功率器件中AlGaN/GaN异质结构的绝缘栅接口控制
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695582
Y. Hori, Taketomo Sato, T. Hashizume
{"title":"Control of insulated gate interfaces on AlGaN/GaN heterostructures for power devices","authors":"Y. Hori, Taketomo Sato, T. Hashizume","doi":"10.1109/WIPDA.2013.6695582","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695582","url":null,"abstract":"Interface properties of Al<sub>2</sub>O<sub>3</sub> insulated gates on AlGaN/GaN structures prepared by atomic layer deposition have been characterized, focusing on the interface state density distribution at the Al<sub>2</sub>O<sub>3</sub>/AlGaN interface. We have developed a C-V calculation method taking into account electronic states charges at the Al<sub>2</sub>O<sub>3</sub>/AlGaN interface and a photoassisted C-V technique utilizing photons with energies less than the bandgap of AlGaN. These techniques were then applied to investigate the effect of the ICP etching of AlGaN on the interface properties.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124015613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Understanding the cascode switching process 了解级联码切换过程
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695593
P. Garsed, R. McMahon
{"title":"Understanding the cascode switching process","authors":"P. Garsed, R. McMahon","doi":"10.1109/WIPDA.2013.6695593","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695593","url":null,"abstract":"Cascode circuits are useful for driving normally-on wide-bandgap devices, but the switching process must be properly understood to optimise their design. Little detailed consideration has previously been given to this. This paper proposes an idealised mathematical description of the cascode switching process, which is used to show that the stray inductance between the two devices plays a critical role in switching. This idealised model is used to propose methods for optimising cascode performance in different applications.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133451478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
From TCAD device simulation to scalable compact model development for GaN HEMT powerbar designs 从TCAD设备仿真到GaN HEMT电源棒设计的可扩展紧凑模型开发
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695569
S. Stoffels, N. Ronchi, B. de Jaeger, D. Marcon, S. Decoutere, Stephan Strauss, A. Erlebach, T. Cilento
{"title":"From TCAD device simulation to scalable compact model development for GaN HEMT powerbar designs","authors":"S. Stoffels, N. Ronchi, B. de Jaeger, D. Marcon, S. Decoutere, Stephan Strauss, A. Erlebach, T. Cilento","doi":"10.1109/WIPDA.2013.6695569","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695569","url":null,"abstract":"For this work we have developed a model based flow for designing AlGaN/GaN power bars, taking into account the physics of the GaN HEMT architecture.. A link is generated between TCAD simulation and circuit simulations for GaN HEMT devices. A scalable compact model was developed, with analytical models for the extrinsic interconnect parasitics and access resistances. This modeling approach allows simulation of large area power bars based on TCAD simulations, and is, to the best of our knowledge, the first time that such a modeling approach is presented for GaN devices.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129131382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Comparative analysis of static and switching performance of 1.2 kV commercial SiC transistors for high power density applications 用于高功率密度应用的1.2 kV商用SiC晶体管静态和开关性能的比较分析
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695560
T. Daranagama, N. Udugampola, R. McMahon, F. Udrea
{"title":"Comparative analysis of static and switching performance of 1.2 kV commercial SiC transistors for high power density applications","authors":"T. Daranagama, N. Udugampola, R. McMahon, F. Udrea","doi":"10.1109/WIPDA.2013.6695560","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695560","url":null,"abstract":"This paper presents a critical comparison of static and switching performance of commercially available 1.2 kV SiC BJTs, MOSFETs and JFETs with 1.2 kV Si IGBTs. The experiments conducted are mainly focussed on investigating the temperature dependence of device performance. As an emerging commercial device, special emphasis is placed on SiC BJTs. The experimental data indicate that the SiC BJTs have relatively smaller conduction, off-state and turn-off switching losses, in comparison to the other devices. Furthermore, SiC BJTs have demonstrated much higher static current gain values in comparison to their silicon counterparts, thereby minimising driver losses. Based on the results, the suitability of SiC devices for high power density applications has been discussed.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121560922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Performance evaluation of wide bandgap semiconductor technologies in automotive applications 宽禁带半导体技术在汽车应用中的性能评价
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695576
P. Shamsi, M. McDonough, B. Fahimi
{"title":"Performance evaluation of wide bandgap semiconductor technologies in automotive applications","authors":"P. Shamsi, M. McDonough, B. Fahimi","doi":"10.1109/WIPDA.2013.6695576","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695576","url":null,"abstract":"This paper evaluates the commercially available semiconductor switch technologies for automotive applications. For this purpose, conventional Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) is compared with wide bandgap Gallium Nitride (GaN) and Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Various design aspects of commercially available wide bandgap switches are introduced. Afterwards, experimental efficiency measurements for SRM drive systems using different semiconductor technologies are performed. Methods to improve performance of the automotive drive system are introduced.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125030680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design and testing of a 1 kW silicon-carbide (SiC) power module 1 kW碳化硅(SiC)功率模块的设计与测试
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695563
C. Neft, E. Hanna, V. Mehrotra, K. Gould, A. Bhunia
{"title":"Design and testing of a 1 kW silicon-carbide (SiC) power module","authors":"C. Neft, E. Hanna, V. Mehrotra, K. Gould, A. Bhunia","doi":"10.1109/WIPDA.2013.6695563","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695563","url":null,"abstract":"A high-temperature, SiC JFET power module was designed for use in a bi-directional, single-stage DC-DC converter. The converter is the interface between a 28 V battery and a 300 V bus, and is required to operate in a harsh environment with an ambient temperature of 120 °C and available 100 °C water-ethylene glycol (WEG) coolant. The power module consists of two JFETs in a single pole configuration with SiC Schottky diodes used as freewheeling diodes. The power module has been subjected to standard characterization tests and also extended (tens of hours) operational tests to confirm its suitability for the application. To the best of our knowledge this is the first demonstration of long term reliability of high temperature (175 °C device junction) SiC power electronics power conversion, with tens of hours of operation well past its infant mortality period.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114964364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive 正常关断GaN开关400V在1.4ns使用超低电阻和电感栅极驱动
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695566
B. Hughes, R. Chu, J. Lazar, S. Hulsey, A. Garrido, D. Zehnder, Marcel Musni, K. Boutros
{"title":"Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive","authors":"B. Hughes, R. Chu, J. Lazar, S. Hulsey, A. Garrido, D. Zehnder, Marcel Musni, K. Boutros","doi":"10.1109/WIPDA.2013.6695566","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695566","url":null,"abstract":"A turn-on time of 1.4ns is measured in a normally-off GaN synchronous boost converter switching 400V. The high-speed performance is achieved by significantly improving the GaN switches, packaging and gate drive. A recently developed normally-off, AlN-based insulating-gate, AlGaN/GaN-on-Si HFET operates with a high gate voltage of 6V [1]. The higher gate voltage increases gate current for faster switching. A Multi-Chip-Module (MCM) allows paralleling GaN switch up to 20Arms with low parasitic inductance of ~ 3.6nH in the power loop. The gate drive uses 50mΩ bare MOSFETs integrated onto the MCM to significantly reduce gate driver inductance to 1nH. The very fast switching results in large drain undershoot of 200V, and gate overshoot of more than 6V. Increasing the gate turn-on resistance to 1.4Ω eliminates gate voltage overshoot and reduces drain voltage overshoot to ~20V, at the cost of an increased turn-on time of 3ns.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130999714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Interface charge engineering in GaN-based MIS-HEMTs 基于氮化镓的mis - hemt界面电荷工程
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695583
Ting‐Hsiang Hung, S. Krishnamoorthy, D. Nath, P. Park, S. Rajan
{"title":"Interface charge engineering in GaN-based MIS-HEMTs","authors":"Ting‐Hsiang Hung, S. Krishnamoorthy, D. Nath, P. Park, S. Rajan","doi":"10.1109/WIPDA.2013.6695583","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695583","url":null,"abstract":"Atomic layer deposited Al<sub>2</sub>O<sub>3</sub>/III-nitride interfacial charge properties were investigated experimentally. Substantial amount of positive interface fixed charges (> 1.8×10<sup>13</sup> cm<sup>-2</sup>) were observed on all the orientations of GaN and Ga-polar AlGaN. These interface charges bring large impact on electron transport especially in vertically scaled devices. Post-metallization anneals is one of the methods which can significantly alter this sheet charge in the case of Al<sub>2</sub>O<sub>3</sub> on GaN. Oxygen plasma is another approach to efficiently reduce the interface charges at Al<sub>2</sub>O<sub>3</sub>/AlGaN. The interface charge density engineering described here can be used to improve performance of device such as gate leakage and electron transport, and also provides a new design of normally-off MISHEMTs.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134111486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A reliable and cost-effective assembly process for quick prototyping with GaN FETs and other flip-chip packages 用于GaN fet和其他倒装芯片封装的快速原型设计的可靠且具有成本效益的组装工艺
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695568
Luke L. Jenkins, C. Wilson, J. Moses, Jeffrey M. Aggas, R. Dean
{"title":"A reliable and cost-effective assembly process for quick prototyping with GaN FETs and other flip-chip packages","authors":"Luke L. Jenkins, C. Wilson, J. Moses, Jeffrey M. Aggas, R. Dean","doi":"10.1109/WIPDA.2013.6695568","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695568","url":null,"abstract":"As transistors rapidly move to smaller packages, reliable prototyping becomes increasingly difficult. Ideally, high accuracy placement machines are preferred for device placement but are not practical for low-volume production. Here, a novel manual assembly process is applied to the 400 μm pitch EPC GaN FETs that has resulted in near 100% yield and exceptional reliability. The process requires a soldering iron and a reflow oven. An X-Ray image is preferred to verify alignment, but a successful alternate method is also presented. This assembly process, which can be applied to other flip chip and chip-scale packaging, will save time and resources in the development of new products employing wide bandgap power devices like EPC GaN FETs, and it has delivered significantly greater yield than alternative published methods.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127424676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信