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The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications最新文献

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An adaptive output impedance gate drive for safer and more efficient control of Wide Bandgap Devices 一种用于更安全、更有效地控制宽带隙器件的自适应输出阻抗门驱动
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695564
R. Grezaud, F. Ayel, N. Rouger, J. Crebier
{"title":"An adaptive output impedance gate drive for safer and more efficient control of Wide Bandgap Devices","authors":"R. Grezaud, F. Ayel, N. Rouger, J. Crebier","doi":"10.1109/WIPDA.2013.6695564","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695564","url":null,"abstract":"This paper presents an adaptive gate drive circuit to provide a safer and more efficient control of Wide Bandgap Devices (WBD). The gate drive circuit fabricated in AMS0.35μm HV CMOS technology has an adaptive output impedance for optimal turn-on/off driving conditions and a gate side power transistor switching transition detection. Its impedance can be precisely adjusted from 0.7Ω to 12.5Ω during transition time accordingly to the switched current to reduce overvoltage due to parasitic inductances. It can also be set to maintain the same transition times of WBD over operating point and temperature variations. Therefore, in an 800 kHz switching frequency synchronous buck converter based on WBD, the proposed gate drive circuit demonstrates secure but drastic dead-time reduction with a peak performance gain of 20% compared to a fixed dead-time of 50ns.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131655475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs 不同缓冲层设计对4H-SiC igbt关断速度影响的分析研究
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695559
Meng-Chia Lee, Xing Huang, A. Huang, E. van Brunt
{"title":"An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs","authors":"Meng-Chia Lee, Xing Huang, A. Huang, E. van Brunt","doi":"10.1109/WIPDA.2013.6695559","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695559","url":null,"abstract":"We propose a criterion to quantify the relationship between buffer layer parameters at a given total charge and turn-off speed for 4H-SiC IGBTs. Three phases of voltage ramp are analytically discussed during the inductive load turn-off by solving each corresponding continuity equation. Extra emphasis will be placed on Phase II - a transition phase in between the initial voltage ramp and punch-through.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120951855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The impact of parallel GaN HEMTs on efficiency of a 12-to-1 V buck converter 并联GaN hemt对12 ~ 1v降压变换器效率的影响
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695596
Luke L. Jenkins, C. Wilson, J. Moses, Jeffrey M. Aggas, Benjamin K. Rhea, R. Dean
{"title":"The impact of parallel GaN HEMTs on efficiency of a 12-to-1 V buck converter","authors":"Luke L. Jenkins, C. Wilson, J. Moses, Jeffrey M. Aggas, Benjamin K. Rhea, R. Dean","doi":"10.1109/WIPDA.2013.6695596","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695596","url":null,"abstract":"The impact of parallel GaN HEMTs on efficiency of a non-isolated point of load (POL) converter is investigated. The test results indicate how many parallel GaN HEMTs should be used to achieve maximum efficiency based on load current. Loss calculations and simulations provided initial direction, and ten POL converters were tested-only varying the number of paralleled GaN HEMTs. Each design was tested between 2.5 and 30 A output. Depending on application load and frequency, the optimal combination of GaN HEMTs can be derived from this data. Results indicate that above 19.5 A load, two EPC2015 switches and four EPC2015 synchronous rectifiers (referred to as 2×2015/4×2015) minimizes loss. Below 19.5 A load, a 1×2015/2×2015 HEMT combination minimizes loss. Results presented here should expedite the design process for future engineers seeking greater power supply efficiency with GaN transistors, and it provides novel test data over a large load spectrum, variety of frequencies, and ten combinations of GaN HEMTs in a non-isolated POL converter.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125419578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
A specific switching characterization method for evaluation of operating point and temperature impacts on wide bandgap devices 一种用于评估工作点和温度对宽带隙器件影响的特定开关表征方法
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695573
R. Grezaud, F. Ayel, N. Rouger, J. Crebier
{"title":"A specific switching characterization method for evaluation of operating point and temperature impacts on wide bandgap devices","authors":"R. Grezaud, F. Ayel, N. Rouger, J. Crebier","doi":"10.1109/WIPDA.2013.6695573","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695573","url":null,"abstract":"Wide Bandgap Devices (WBD) are expected to be used in high efficiency, high frequency and high temperature power converters. In this paper, a special pulse mode buck converter characterization bench is presented. It allows to precisely evaluate the impact of the operating point and the temperature on the WBD switching performances with the least possible interferences and the maximum level of flexibility. An electro-thermal simulation shows that the thermal stress due to the device characterization is considerably reduced, compared to the classical double pulse method, therefore removing the need of a thermal conductive packaging for the DUT. Indeed the desired switching conditions are smoothly set in less than 3 ms by an auxiliary transistor before the WBD under test switches only one time. Finally a SiC JFET has been characterized on a wide range with a single inductor until 250V/20A and up to 150°C to study its switching characteristics dependency.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"36 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125688825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ultrahigh voltage SiC bipolar devices 超高压SiC双极器件
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695556
K. Fukuda, D. Okamoto, S. Harada, Yasunori Tanaka, Y. Yonezawa, T. Deguchi, S. Katakami, H. Ishimori, S. Takasu, M. Arai, K. Takenaka, H. Fujisawa, M. Takei, K. Matsumoto, N. Ohse, Mina Ryo, C. Ota, K. Takao, M. Mizukami, Tomohisa Kato, T. Izumi, T. Hayashi, K. Nakayama, K. Asano, H. Okumura, T. Kimoto
{"title":"Ultrahigh voltage SiC bipolar devices","authors":"K. Fukuda, D. Okamoto, S. Harada, Yasunori Tanaka, Y. Yonezawa, T. Deguchi, S. Katakami, H. Ishimori, S. Takasu, M. Arai, K. Takenaka, H. Fujisawa, M. Takei, K. Matsumoto, N. Ohse, Mina Ryo, C. Ota, K. Takao, M. Mizukami, Tomohisa Kato, T. Izumi, T. Hayashi, K. Nakayama, K. Asano, H. Okumura, T. Kimoto","doi":"10.1109/WIPDA.2013.6695556","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695556","url":null,"abstract":"Ultrahigh voltage SiC bipolar devices more than 13 kV were developed, and their package technology was investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV p-channel IGBT with a low differential specific on-resistance (Rdiff,on) at high temperature. Moreover, the results reveal that the nano-tech resin, improved resin and Si3N4 DBC substrate are the best materials for package at high temperature and ultrahigh voltage.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129405461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High step down ratio (400 V to 1 V) phase shift full bridge DC/DC converter for data center power supplies with GaN FETs 高降压比(400v至1v)相移全桥DC/DC转换器的数据中心电源与氮化镓场效应管
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695554
Yutian Cui, L. Tolbert
{"title":"High step down ratio (400 V to 1 V) phase shift full bridge DC/DC converter for data center power supplies with GaN FETs","authors":"Yutian Cui, L. Tolbert","doi":"10.1109/WIPDA.2013.6695554","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695554","url":null,"abstract":"Energy efficiency of typical data centers is less than 50% where more than half of the power is consumed during power conversion, distribution, cooling, etc. In this paper, a single power stage architecture that converts 400 V directly to 1 V is discussed. Input series and output parallel structure (ISOP) is selected due to the high input voltage and large output current operation condition. Phase shift full bridge (PSFB) DC/DC converter with high step down ratio (66:1) is built with Gallium Nitride (GaN) FETs targeting at high efficiency. This paper mainly focuses on the study of a single 66 V to 1 V converter. Prototypes of the PSFB converter is designed, built, and tested. Preliminary experimental results are provided to verify the design.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114916637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Tutorial workbook 教程工作簿
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 1900-01-01 DOI: 10.1109/wipda.2013.6695548
E. Hildinger, Rod Johnson, P. Khan, Peter Nagourney
{"title":"Tutorial workbook","authors":"E. Hildinger, Rod Johnson, P. Khan, Peter Nagourney","doi":"10.1109/wipda.2013.6695548","DOIUrl":"https://doi.org/10.1109/wipda.2013.6695548","url":null,"abstract":"","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132069285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication and evaluation of a high performance SiC inverter for wireless power transfer applications 用于无线电力传输应用的高性能SiC逆变器的制造和评估
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 1900-01-01 DOI: 10.1109/WIPDA.2013.6695578
O. Onar, S. Campbell, P. Ning, JohnM . Miller, Zhenxian Liang
{"title":"Fabrication and evaluation of a high performance SiC inverter for wireless power transfer applications","authors":"O. Onar, S. Campbell, P. Ning, JohnM . Miller, Zhenxian Liang","doi":"10.1109/WIPDA.2013.6695578","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695578","url":null,"abstract":"In this study, a high power density SiC high efficiency wireless power transfer converter system via inductive coupling has been designed and developed. The detailed power module design, cooling system design and power stage development are presented. The successful operation of rated power converter system demonstrates the feasible wireless charging plan. One of the most important part of this study is the wind bandgap devices packaged at the Oak Ridge National Laboratory (ORNL) using the in-house packaging technologies by employing the bare SiC dies acquired from CREE, which are rated at 50 A/1200 V each. These packaged devices are also in-house tested and characterized using ORNL's Device Characterization Facility. The successful operation of the proposed inverter is experimentally verified and the efficiency and operational characteristics of the inverter are also revealed.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124656071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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