The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - 最新文献

600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications

Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695552 T. Kikkawa, T. Hosoda, S. Akiyama, Y. Kotani, Toshihiro Wakabayashi, Tsutomu Ogino, K. Imanishi, Akitoshi Mochizuki, K. Itabashi, K. Shono, Y. Asai, K. Joshin, T. Ohki, M. Kanamura, M. Nishimori, T. Imada, J. Kotani, A. Yamada, N. Nakamura, T. Hirose, Keiji Watanabe

Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695585 Pucheng Liu, K. Kakushima, H. Iwai, A. Nakajima, T. Makino, M. Ogura, S. Nishizawa, H. Ohashi

5-phase interleaved buck converter with gallium nitride transistors

Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695594 N. Videau, T. Meynard, V. Bley, D. Flumian, E. Sarraute, G. Fontès, J. Brandelero

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