Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Abstract

Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.