{"title":"不同缓冲层设计对4H-SiC igbt关断速度影响的分析研究","authors":"Meng-Chia Lee, Xing Huang, A. Huang, E. van Brunt","doi":"10.1109/WIPDA.2013.6695559","DOIUrl":null,"url":null,"abstract":"We propose a criterion to quantify the relationship between buffer layer parameters at a given total charge and turn-off speed for 4H-SiC IGBTs. Three phases of voltage ramp are analytically discussed during the inductive load turn-off by solving each corresponding continuity equation. Extra emphasis will be placed on Phase II - a transition phase in between the initial voltage ramp and punch-through.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs\",\"authors\":\"Meng-Chia Lee, Xing Huang, A. Huang, E. van Brunt\",\"doi\":\"10.1109/WIPDA.2013.6695559\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a criterion to quantify the relationship between buffer layer parameters at a given total charge and turn-off speed for 4H-SiC IGBTs. Three phases of voltage ramp are analytically discussed during the inductive load turn-off by solving each corresponding continuity equation. Extra emphasis will be placed on Phase II - a transition phase in between the initial voltage ramp and punch-through.\",\"PeriodicalId\":313351,\"journal\":{\"name\":\"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2013.6695559\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2013.6695559","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs
We propose a criterion to quantify the relationship between buffer layer parameters at a given total charge and turn-off speed for 4H-SiC IGBTs. Three phases of voltage ramp are analytically discussed during the inductive load turn-off by solving each corresponding continuity equation. Extra emphasis will be placed on Phase II - a transition phase in between the initial voltage ramp and punch-through.
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