The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications最新文献_第4页

A GaN transistor based 90 W isolated Quasi-Switched-Capacitor DC/DC converter for AC/DC adapters 一种基于GaN晶体管的90w隔离准开关电容DC/DC变换器，用于AC/DC适配器

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695553

Xuan Zhang, Chengcheng Yao, M. Scott, E. Davidson, Jinzhu Li, P. Xu, Jin Wang

{"title":"A GaN transistor based 90 W isolated Quasi-Switched-Capacitor DC/DC converter for AC/DC adapters","authors":"Xuan Zhang, Chengcheng Yao, M. Scott, E. Davidson, Jinzhu Li, P. Xu, Jin Wang","doi":"10.1109/WIPDA.2013.6695553","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695553","url":null,"abstract":"This paper presents the design of a 90 W isolated Quasi-Switched-Capacitor (QSC) DC/DC converter, serving as the DC/DC stage for AC/DC adapters. The converter employs a QSC DC/AC circuit and 2 different rectifier circuits, which are a synchronous-rectifier, current-doubler (SRCD) circuit and a synchronous-rectifier, center-tapped (SRCT) circuit. Compared to Flyback and LLC resonant converters, the QSC DC/DC converter features: 1) reduced voltage stress on the primary-side switches to 2/3 of the input voltage; 2) reduced voltage stress on the transformer to 1/3 of the input voltage and a lower transformer turns ratio; 3) a wide range for soft-switching operation and high efficiency; 4) a simple control strategy. The operation principles and simulation results are presented. A 90 W, 400 V/19 V, 500 kHz QSC converter with a SRCD circuit is built, using 600 V Transphorm GaN HEMTs and 200 V EPC eGaN FETs. The converter size is 70 mm×50 mm×16 mm, and the peak efficiency is 90.3%. Since the GaN HEMT is oversized for this application, the efficiency is not optimized. To pursue higher power density and efficiency, a 90 W, 85 V/19 V, 1 MHz QSC resonant converter with a SRCT circuit is built, using 100 V EPC eGaN FETs for all switches, to serve as the down-stream circuit of a Buck-PFC stage. This prototype can achieve: 1) a high power density of 10.5 W/cm3; 2) wide-range soft switching for all switches and an estimated efficiency of 96%.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"304 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115932931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Silicon carbide high-temperature packaging module fabrication 碳化硅高温封装模块制造

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695591

W. Brokaw, J. Elmes, B. Grummel, Z. Shen, Thomas Wu

{"title":"Silicon carbide high-temperature packaging module fabrication","authors":"W. Brokaw, J. Elmes, B. Grummel, Z. Shen, Thomas Wu","doi":"10.1109/WIPDA.2013.6695591","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695591","url":null,"abstract":"A proposed method for accommodating high-temperature operation has been studied and developed through combined efforts of Advanced Power Electronics Corporation (ApECOR) and University of Central Florida. A novel process is being explored that will ultimately lead to design, fabrication, and verification of high temperature packaging for silicon carbide (SiC) power modules. The process is established to advance the operational capabilities of power modules during high-temperature conditions. Prototype modules were produced and underwent significant testing to establish capability of operation at a minimum temperature of 350 °C with probable expectation of operation in excess of 400 °C. A strenuous thermal cycle testing apparatus was established to rapidly cycle prototype modules between 80 °C and 350 °C in excess of 150 iterations per module. Analysis of the testing data did not exhibit degradation in the module performance characteristics, indicating successful module design performance. Based on the scope and goals of this research effort, further development of the design process is believed to be feasible for progression towards further development and commercialization.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121794521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Evaluation and application of SiC diode in three-phase inverters SiC二极管在三相逆变器中的评价与应用

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695592

Stephen Savulak, M. Shen

引用次数: 3

Very high performance GaN-on-GaN diodes 非常高性能的GaN-on-GaN二极管

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695550

I. Kizilyalli, A. Edwards, D. Bour, H. Shah, D. Disney, H. Nie

引用次数: 3

Diamond bipolar device simulation 金刚石双极器件仿真

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695584

A. Maréchal, N. Rouger, J. Crebier, J. Pernot, S. Koizumi, T. Teraji, E. Gheeraert

{"title":"Diamond bipolar device simulation","authors":"A. Maréchal, N. Rouger, J. Crebier, J. Pernot, S. Koizumi, T. Teraji, E. Gheeraert","doi":"10.1109/WIPDA.2013.6695584","DOIUrl":"https://doi.org/10.1109/WIPDA.2013.6695584","url":null,"abstract":"Diamond is not only known for being the hardest gemstone but also for being the semiconductor having the highest calculated figures of merit (FOM). This comes from the unique physical properties of this material. Thus, it is predicted that diamond should exceeds silicon carbide (SiC) and galium nitride (GaN) in terms of low loss device and better compromises for on-state resistance versus breakdown voltage. However, in practice the applications of diamond devices are still limited and the performances are still not reaching the theoretical predictions. The question is then how to predict and evaluate diamond device performances themselves and in their environment. One of the possible answer is by using finite element based softwares. Few reports exist on unipolar diamond device modeling, and none on diamond bipolar device. The main limitations come from the lack of parameters implemented in the simulation tools together with the difficulties for modeling wide band gap semiconductor, i.e. extremely low carrier concentrations. In this study, we present the results on the first simulation of a diamond bipolar junction transistor electrical characteristics. The validation of the simulation is the first step towards the prediction of the architecture and behavior of future diamond devices.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121711789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Ultra high voltage IGBTs in 4H-SiC 4H-SiC超高压igbt

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695557

S. Ryu, C. Capell, C. Jonas, Y. Lemma, M. O'loughlin, J. Clayton, E. van Brunt, K. Lam, J. Richmond, A. Burk, D. Grider, S. Allen, J. Palmour, A. Agarwal, A. Kadavelugu, S. Bhattacharya

引用次数: 36

Silicon carbide integrated circuits for extreme environments 用于极端环境的碳化硅集成电路

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695562

A. Kashyap, Cheng-Po Chen, R. Ghandi, A. Patil, E. Andarawis, L. Yin, D. Shaddock, P. Sandvik, K. Fang, Zhenzhen Shen, W. Johnson

引用次数: 37

Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications 开发用于高温和高频应用的1200v, 120a SiC MOSFET模块

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695561

Zheng Chen, Yiying Yao, Wenli Zhang, D. Boroyevich, K. Ngo, P. Mattavelli, R. Burgos

引用次数: 34

Accurate switching energy estimation of parallel eGaN FETs for modern aircraft applications 用于现代飞机的并联eGaN场效应管的精确开关能量估计

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695574

B. Cougo, H. Schneider, J. Brandelero, T. Meynard

引用次数: 13

The outlook for SiC vertical JFET technology SiC垂直JFET技术展望

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI: 10.1109/WIPDA.2013.6695558

A. Bhalla, Xueqing Li, P. Alexandrov, J. Christopher Dries

引用次数: 8