The outlook for SiC vertical JFET technology

Abstract

Excellent Silicon Carbide (SiC) material properties make SiC JFETs extremely attractive for high power density and high frequency power applications, as well as for circuit protection functions. The absence of a gate oxide and internal parasitic devices allows the device to operate especially well at high temperatures. The vertical current flow design of trench JFETs lead to near ideal specific on-resistance when combined with current wafer thinning and laser contact technologies. Device costs are expected to rapidly drop with the maturing of the foundry production model, migration to 6 inch fabrication and the further application of charge-balance technologies. With the availability of integrated drivers, these devices will become much easier to use. Significant packaging improvements will be needed to fully exploit these devices.