From TCAD device simulation to scalable compact model development for GaN HEMT powerbar designs

Abstract

For this work we have developed a model based flow for designing AlGaN/GaN power bars, taking into account the physics of the GaN HEMT architecture.. A link is generated between TCAD simulation and circuit simulations for GaN HEMT devices. A scalable compact model was developed, with analytical models for the extrinsic interconnect parasitics and access resistances. This modeling approach allows simulation of large area power bars based on TCAD simulations, and is, to the best of our knowledge, the first time that such a modeling approach is presented for GaN devices.