Hard switching speed improvements in GaN-based synchronous buck converters

C. Wilson, Luke L. Jenkins, J. Moses, Jeffrey M. Aggas, R. Dean
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引用次数: 9

Abstract

In designing high efficiency, large step down buck converters, the power semiconductors contribute a significant loss mechanism through switching losses. Minimizing these losses can be achieved by running at lower frequencies, decreasing the actual switching time, or performing soft switching. However, soft switching converters introduce extra components, which can impact reliability, cost, and size of the final converters. Therefore, extremely rapid hard switching is preferable to soft switching converters. This paper proposes a new layout technique for low parasitic inductance paths using commercially standard PCB specifications for very fast switching speeds of GaN power devices in flip-chip packages resulting in a highly efficient (>94%) hard switching 12-1 V synchronous buck converter. The proposed technique is experimentally verified at output loads from 4 - 20 A and achieves less than 5 ns switching times.
基于氮化镓的同步降压变换器的硬开关速度改进
在设计高效率、大降压降压变换器时,功率半导体通过开关损耗起到了重要的作用。通过在较低频率下运行、减少实际开关时间或执行软开关,可以最大限度地减少这些损耗。然而,软开关变换器引入了额外的组件,这可能会影响最终变换器的可靠性、成本和尺寸。因此,极快的硬开关比软开关变换器更可取。本文提出了一种新的低寄生电感路径布局技术,采用商业标准PCB规格,用于倒装封装中GaN功率器件的非常快的开关速度,从而产生高效(>94%)硬开关12-1 V同步降压转换器。该技术在4 - 20 A的输出负载下进行了实验验证,实现了小于5 ns的开关时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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