氮化Si3N4钝化层性质对常关AlGaN/GaN HEMT电学特性的影响

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI:10.1109/WIPDA.2013.6695587

F. Iucolano, C. Miccoli, M. Nicotra, A. Stocco, F. Rampazzo, A. Zanandrea, Martino V. Cinnera, A. Patti, S. Rinaudo, F. Soci, A. Chini, E. Zanoni, G. Meneghesso

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引用次数: 8

摘要

本文对两种不同钝化层的样品进行了比较。漏极漏电流的增加使SiN层中的Si浓度增加。另一方面，记录了动态RON的类似行为。T-CAD模拟支持我们关于导致参数产量损失因素的假设。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT

In this paper a comparison between two samples with two different SiN passivation layers was performed. An increment of the drain leakage current increasing the Si concentration in the SiN layer was observed. On the other hand, a similar behavior of dynamic RON was recorded. T-CAD simulations supported our hypothesis on the factors that cause parametric yield loss.

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The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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