Research and development on Ga2O3 transistors and diodes

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI:10.1109/WIPDA.2013.6695572

M. Higashiwaki, K. Sasaki, M. Wong, T. Kamimura, D. Krishnamurthy, A. Kuramata, T. Masui, S. Yamakoshi

引用次数: 0

Abstract

New widegap compound semiconductor gallium oxide (Ga₂O₃) power devices have been attracted as strong candidates for future power electronics. Here, we will introduce material properties, productivity of Ga₂O₃, and current status of research and development on its transistors and diodes.

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Ga2O3晶体管及二极管的研究与开发

新型宽间隙化合物半导体氧化镓(Ga2O3)功率器件已成为未来电力电子领域的有力候选器件。在这里，我们将介绍Ga2O3的材料特性、生产效率以及其晶体管和二极管的研究和发展现状。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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