使用TiSi2电极的AlGaN/GaN结构的欧姆接触工艺

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI:10.1109/WIPDA.2013.6695586

M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito

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引用次数: 2

摘要

我们报道了在AlGaN/GaN结构上使用TiSi2电极作为接触金属的欧姆接触工艺。通过溅射和退火，将Ti层和Si层循环沉积，形成TiSi2薄膜。退火样品的透射电镜横截面图显示，在AlGaN层上方形成了一个界面层，但在位错处没有观察到Ti或Si原子的侵入。随着退火时间的延长，比接触电阻逐渐减小。因此，TiSi2可以作为与表晶位错密度无关的AlGaN/GaN结构的接触材料。

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An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes

We report an Ohmic contact process using TiSi2 electrodes for contact metals on AlGaN/GaN structures. TiSi2 films have been formed by cyclic deposition of Ti and Si layers by sputtering and annealing. Cross-sectional TEM image of the sample annealed has revealed a formation of an interfacial layer above AlGaN layer, however, no intrusion of Ti or Si atoms has been observed at dislocation. Specific contact resistance on annealing time showed gradual reduction with longer time. Therefore, TiSi2 can be a candidate as a contact material for AlGaN/GaN structures independent to dislocation density of epiwafers.

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The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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