Jeffrey M. Aggas, Luke L. Jenkins, C. Wilson, J. Moses, William E. Abell, Benjamin K. Rhea, R. Dean
{"title":"用于电力电子应用的GaN HEMT器件的交叉批表征","authors":"Jeffrey M. Aggas, Luke L. Jenkins, C. Wilson, J. Moses, William E. Abell, Benjamin K. Rhea, R. Dean","doi":"10.1109/WIPDA.2013.6695589","DOIUrl":null,"url":null,"abstract":"Modern switch-mode power supply (SMPS) applications have embraced the benefits realized through the use of gallium nitride (GaN) HEMT technology as it allows switching speeds to increase drastically with respect to silicon parts. Since GaN HEMT devices are a relatively new technology in the power electronics realm, the manufacturing processes have not been perfected to the extent that silicon processes have been. Inconsistent RDS(ON) characteristics across manufactured batches can cause device failure as well as an imbalance in current distribution if the devices are used in a parallel fashion. The device of interest in this work is the Efficient Power Conversion (EPC) 2015 GaN HEMT. Five batches manufactured approximately six months apart are characterized. Manufacturing reliability analysis is presented and the results are compared with the device characteristics provided by EPC.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A cross batch characterization of GaN HEMT devices for power electronics applications\",\"authors\":\"Jeffrey M. Aggas, Luke L. Jenkins, C. Wilson, J. Moses, William E. Abell, Benjamin K. Rhea, R. Dean\",\"doi\":\"10.1109/WIPDA.2013.6695589\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Modern switch-mode power supply (SMPS) applications have embraced the benefits realized through the use of gallium nitride (GaN) HEMT technology as it allows switching speeds to increase drastically with respect to silicon parts. Since GaN HEMT devices are a relatively new technology in the power electronics realm, the manufacturing processes have not been perfected to the extent that silicon processes have been. Inconsistent RDS(ON) characteristics across manufactured batches can cause device failure as well as an imbalance in current distribution if the devices are used in a parallel fashion. The device of interest in this work is the Efficient Power Conversion (EPC) 2015 GaN HEMT. Five batches manufactured approximately six months apart are characterized. Manufacturing reliability analysis is presented and the results are compared with the device characteristics provided by EPC.\",\"PeriodicalId\":313351,\"journal\":{\"name\":\"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2013.6695589\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2013.6695589","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
摘要
现代开关模式电源(SMPS)应用已经通过使用氮化镓(GaN) HEMT技术实现了优势，因为它允许相对于硅部件的开关速度大幅提高。由于GaN HEMT器件在电力电子领域是一项相对较新的技术，其制造工艺尚未达到硅工艺的完善程度。如果设备以并行方式使用，则生产批次之间不一致的RDS(ON)特性可能导致设备故障以及电流分布不平衡。在这项工作中感兴趣的器件是高效功率转换(EPC) 2015 GaN HEMT。大约相隔六个月生产的五个批次的特征。进行了制造可靠性分析，并与EPC提供的器件特性进行了比较。
A cross batch characterization of GaN HEMT devices for power electronics applications
Modern switch-mode power supply (SMPS) applications have embraced the benefits realized through the use of gallium nitride (GaN) HEMT technology as it allows switching speeds to increase drastically with respect to silicon parts. Since GaN HEMT devices are a relatively new technology in the power electronics realm, the manufacturing processes have not been perfected to the extent that silicon processes have been. Inconsistent RDS(ON) characteristics across manufactured batches can cause device failure as well as an imbalance in current distribution if the devices are used in a parallel fashion. The device of interest in this work is the Efficient Power Conversion (EPC) 2015 GaN HEMT. Five batches manufactured approximately six months apart are characterized. Manufacturing reliability analysis is presented and the results are compared with the device characteristics provided by EPC.
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