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Degradation model of LED based on accelerated life test 基于加速寿命试验的LED退化模型
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI: 10.1109/IPFA.2011.5992771
J. W. Jang, Seung Yoon Choi, J. Son
{"title":"Degradation model of LED based on accelerated life test","authors":"J. W. Jang, Seung Yoon Choi, J. Son","doi":"10.1109/IPFA.2011.5992771","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992771","url":null,"abstract":"ALT(accelerated life test) is a right choice to predict the lifetime of LED lighting source that is expected to have much longer lifetime than the conventional lighting sources. Middle power light-emitting diode (LED) accelerated life tests(ALT) were carried out by two kind of test methods (LED PKG level ALT and LED PKG component (chip, phosphor, premold) level ALT). The predicted curve by using component ALT model contained an inflection point caused by degradation characteristics of PKG component (premold). Therefore, we expect that component accelerated model is more accurate and more logical than simple extrapolation methods as used by LM80 and TM21.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114883295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Failure analysis of semiconductor device using Nano Electro-static field Probe Sensor (NEPS) 纳米静电场探针传感器(NEPS)半导体器件失效分析
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI: 10.1109/IPFA.2011.5992742
Seigo Ito, K. Takiguchi, Hiroko Sodeyama, T. Matsumoto
{"title":"Failure analysis of semiconductor device using Nano Electro-static field Probe Sensor (NEPS)","authors":"Seigo Ito, K. Takiguchi, Hiroko Sodeyama, T. Matsumoto","doi":"10.1109/IPFA.2011.5992742","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992742","url":null,"abstract":"We developed micro-region probe (Called “NEPS”, Nano Electrostatic field Probe Sensor) and failure-part estimation approach using it in which the surface and reverse side of LSI Die are irradiated with laser beam light in non-bias and non-contact state and faint quasi-electrostatic field due to photo excitation and thermal excitation generated at that time are detected. In this paper, we clarified the detection mechanism of quasi-electrostatic field from measured data using NEPS and showed the effectiveness of this approach by actually identifying a failure part of LSI.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115029033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The properties comparison between Au and Cu wires bond in DRAM component DRAM元件中金线与铜线结合的性能比较
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI: 10.1109/IPFA.2011.5992744
Yi Heang Chen, M. Hsiao, C. Tseng
{"title":"The properties comparison between Au and Cu wires bond in DRAM component","authors":"Yi Heang Chen, M. Hsiao, C. Tseng","doi":"10.1109/IPFA.2011.5992744","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992744","url":null,"abstract":"Although Au wires is a popular bonding material in IC package. But the trend to replace Au wire with Cu in wire bonding process has become an important trend in semiconductor package. To explore properties variation for these two wires bond. We focused on mechanical, electrical, physical related properties comparison between Au and Cu wires bond in DRAM component. The test vehicles with both Au and 4N purity (99.99 wt%) Cu wires and then diameter size were 25um. To investigate mechanical properties of IMC formation on Au and Cu wires bond-ability on Al pad, both ball shear and wire pull tests were performed on test samples. In electrical related evolution result displayed that Cu wire was lower than Au wire bond in resistance increase rate up to thermal aging 500hr. SEM cross-sectioned was performed to identify IMC growth rate of Cu-Al pad is slower than that of Au-Al pad due to two raw materials with variation chemical property. Moreover, IMC growth behavior is different between Cu and Au wires bond. From this study result, we obtained Cu with advantages than Au in properties of wires bond.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"435 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116404710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparison of classical and two-photon photoelectric laser stimulation capabilities for failure analysis 经典和双光子光电激光刺激失效分析能力的比较
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI: 10.1109/IPFA.2011.5992781
K. Shao, V. Pouget, E. Faraud, C. Larue, D. Lewis
{"title":"Comparison of classical and two-photon photoelectric laser stimulation capabilities for failure analysis","authors":"K. Shao, V. Pouget, E. Faraud, C. Larue, D. Lewis","doi":"10.1109/IPFA.2011.5992781","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992781","url":null,"abstract":"This paper reviews important parameters for the two-photon absorption (TPA) laser stimulation technique and presents results concerning the characterization of the TPA effective spot size along lateral and axial directions. TPA scans are compared with classical photoelectric stimulation images to investigate TPA capabilities for failure analysis and design debug.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116601688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-ideal characteristic analysis of GaN-based light-emitting diode using current-voltage (I–V) and low-frequency noise experiment 利用电流-电压和低频噪声实验分析氮化镓基发光二极管的非理想特性
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI: 10.1109/IPFA.2011.5992713
J. Park, Taewook Kang, D. Woo, J. Son, Jong-Ho Lee, Byung-Gook Park, Hyungcheol Shin
{"title":"Non-ideal characteristic analysis of GaN-based light-emitting diode using current-voltage (I–V) and low-frequency noise experiment","authors":"J. Park, Taewook Kang, D. Woo, J. Son, Jong-Ho Lee, Byung-Gook Park, Hyungcheol Shin","doi":"10.1109/IPFA.2011.5992713","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992713","url":null,"abstract":"In order to investigate the reliability problem of the GaN-based light-emitting diode (LED), the non-ideal characteristics of the GaN-based LED were analyzed through current-voltage (I–V) and low-frequency noise experiment. Ideality factor, parasitic resistance and parasitic diode were considered to analyze the I–V characteristic. We could find that the parasitic diode makes the forward hump and divides the I–V curve into the parasitic and the main part. Those two parts have much different ideality factor and series resistance value, respectively. Power spectral density (PSD) with various frequency and current were measured to examine the noise characteristic. We could find the high level and the steep slope of the PSD at low currents, which indicate the unstable noise characteristic.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128452716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electrical failure and damage analysis of multi-layer metal films on flexible substrate during cyclic bending deformation 柔性基板上多层金属薄膜在循环弯曲变形过程中的电气失效与损伤分析
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI: 10.1109/IPFA.2011.5992725
Byoung-Joon Kim, Hae-A-Seul Shin, I. Choi, Young‐Chang Joo
{"title":"Electrical failure and damage analysis of multi-layer metal films on flexible substrate during cyclic bending deformation","authors":"Byoung-Joon Kim, Hae-A-Seul Shin, I. Choi, Young‐Chang Joo","doi":"10.1109/IPFA.2011.5992725","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992725","url":null,"abstract":"The electrical resistance Cu film on flexible substrate was investigated in cyclic bending deformation. The electrical resistance of 1 µm thick Cu film on flexible substrate increased up to 120 % after 500,000 cycles in 1.1 % tensile bending strain. Crack and extrusion were observed due to the fatigue damage of metal film. Low bending strain did not cause any damage on metal film but higher bending strain resulted in severe electrical and mechanical damage. Thinner film showed higher fatigue resistance because of the better mechanical property of thin film. Cu film with NiCr under-layer showed poorer fatigue resistance in tensile bending mode. Ni capping layer did not improve the fatigue resistance of Cu film, but Al capping layer suppressed crack formation and lowered electrical resistance change. The NiCr under layer, Ni capping layer, and Al capping layer effect on electrical resistance change of Cu film was compared with Cu only sample.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"387 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124792758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Drain bias stress-induced degradation in amorphous silicon thin film transistors with negative gate bias 负栅极偏压非晶硅薄膜晶体管的漏极偏压应力诱导退化
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI: 10.1109/IPFA.2011.5992778
Dapeng Zhou, Mingxiang Wang, Xiaowei Lu, Jieyun Zhou
{"title":"Drain bias stress-induced degradation in amorphous silicon thin film transistors with negative gate bias","authors":"Dapeng Zhou, Mingxiang Wang, Xiaowei Lu, Jieyun Zhou","doi":"10.1109/IPFA.2011.5992778","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992778","url":null,"abstract":"In this study, degradation of amorphous silicon thin film transistors (a-Si TFTs) under drain bias (V<inf>d</inf>) stresses with fixed negative gate bias (V<inf>g</inf>) has been investigated. For DC V<inf>d</inf> stress, state creation mechanism dominates the threshold voltage (V<inf>th</inf>) degradation for relative large negative V<inf>gd</inf> (V<inf>g</inf>−V<inf>d</inf>) while state creation and/or electron trapping dominates for positive V<inf>gd</inf>. For AC V<inf>d</inf> stress, state creation, electron trapping and hole trapping contribute to the degradation. Dominant mechanism depends on stress time, frequency and the polarity of V<inf>gd</inf>. Decreasing stress voltage suppresses state creation and/or hole trapping for −V<inf>gd</inf> condition, but enhances state creation and/or electron trapping for +V<inf>gd</inf> condition.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130581067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of C4F8 gas for etch process in slow erase failure of flash memory devices C4F8气体在快闪记忆体慢速擦除失效蚀刻过程中的研究
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI: 10.1109/IPFA.2011.5992772
S. Hwang, Yeong sil Kim, K. C. Yoon, Sang kwon Kim, Young sun Ko
{"title":"Study of C4F8 gas for etch process in slow erase failure of flash memory devices","authors":"S. Hwang, Yeong sil Kim, K. C. Yoon, Sang kwon Kim, Young sun Ko","doi":"10.1109/IPFA.2011.5992772","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992772","url":null,"abstract":"In manufacturing of flash memory devices, etch processes have a very critical role to make device of good qualities, especially etch-process of common source area has a strong impact on slow-erase failure of flash memory, so we have studied which is the effective parameter of etch process in slow-erase failure mode, finally we have found that the flow rate of C4F8 gas in etch-process of common source is the main effective parameter. The less the flow rate of C4F8 gas, the more the vertical loss of active area in common source region which leads to slow-erase failure. the vertical loss of active area in common source region extend the current path, eventually leads to higher resistance of the circuit of transistor, higher resistance reduces the drain current of floating gates which eventually leads to slow-erase.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124116458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure isolation using FIB assist Photon Emission Microscopy analysis and microprobe analysis 故障隔离使用FIB辅助光子发射显微镜分析和微探针分析
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI: 10.1109/IPFA.2011.5992737
Gaojie Wen, Binghai Liu, W. Wang, Jinglong Li, Li Tian, Xuezhu Wang
{"title":"Failure isolation using FIB assist Photon Emission Microscopy analysis and microprobe analysis","authors":"Gaojie Wen, Binghai Liu, W. Wang, Jinglong Li, Li Tian, Xuezhu Wang","doi":"10.1109/IPFA.2011.5992737","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992737","url":null,"abstract":"OBIRCH/EMMI and microprobe analysis were widely used to isolate failed device. But routine failure isolation method may not find the leakage path on some special functional failure cases. Two cases were presented to show a useful failure isolation strategy—FIB assisted photon emission analysis and microprobe by performing simulation or removing the load effect.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130234921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Interconnect processes and reliability for RF technology 射频技术的互连过程和可靠性
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI: 10.1109/IPFA.2011.5992796
J. Gambino, F. Anderson, E. Cooney, J. He, R. Bolam, B. Webb, C. Cabral, T. Shaw, D. Vanslette
{"title":"Interconnect processes and reliability for RF technology","authors":"J. Gambino, F. Anderson, E. Cooney, J. He, R. Bolam, B. Webb, C. Cabral, T. Shaw, D. Vanslette","doi":"10.1109/IPFA.2011.5992796","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992796","url":null,"abstract":"High performance radio frequency (RF) technology is required for many communications applications, such as mobile phones. The interconnects for RF circuits are different from those for digital circuits in a number of ways, including thick wiring layers (> 3 µm), extensive use of passive devices such as thin film resistors, metal-insulator-metal (MIM) capacitors, and inductors, and use of through-silicon vias (TSVs) for ground planes. As a result, there are a number of unique reliability challenges for these devices, including controlling stress in thick wiring layers and TSVs, and ensuring reliability of MIM capacitor dielectrics. In this paper, we will describe process optimization and reliability evaluation for interconnects in RF circuits.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130468355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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