2014 IEEE International Electron Devices Meeting最新文献_第9页

DTMOS mode as an effective solution of RTN suppression for robust device/circuit co-design DTMOS模式作为鲁棒器件/电路协同设计中抑制RTN的有效解决方案

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047040

Shaofeng Guo, Ru Huang, P. Hao, Mulong Luo, P. Ren, Jianping Wang, Weihai Bu, Jingang Wu, W. Wong, Scott Yu, Hanming Wu, Shiuh-Wuu Lee, Runsheng Wang, Yangyuan Wang

引用次数: 7

A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies 14nm以下功率效率FDSOI技术的移动性增强策略

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047002

B. Desalvo, P. Morin, M. Pala, G. Ghibaudo, O. Rozeau, Q. Liu, A. Pofelski, S. Martini, M. Cassé, S. Pilorget, F. Allibert, F. Chafik, T. Poiroux, P. Scheer, R. Southwick, D. Chanemougame, L. Grenouillet, K. Cheng, F. Andrieu, S. Barraud, S. Maitrejean, E. Augendre, H. Kothari, N. Loubet, W. Kleemeier, M. Celik, O. Faynot, M. Vinet, R. Sampson, B. Doris

{"title":"A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies","authors":"B. Desalvo, P. Morin, M. Pala, G. Ghibaudo, O. Rozeau, Q. Liu, A. Pofelski, S. Martini, M. Cassé, S. Pilorget, F. Allibert, F. Chafik, T. Poiroux, P. Scheer, R. Southwick, D. Chanemougame, L. Grenouillet, K. Cheng, F. Andrieu, S. Barraud, S. Maitrejean, E. Augendre, H. Kothari, N. Loubet, W. Kleemeier, M. Celik, O. Faynot, M. Vinet, R. Sampson, B. Doris","doi":"10.1109/IEDM.2014.7047002","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047002","url":null,"abstract":"Continuous CMOS improvement has been achieved in recent years through strain engineering for mobility enhancement. Nevertheless, as transistor pitch is scaled down, conventional strain elements (as embedded stressors, stress liners) are loosing their effectiveness [1]. The use of strained materials for the channel to boost performance is thus essential. In this paper, we present an original multilevel evaluation methodology for stress engineering design in next-generation power-efficient devices. Fully-Depleted-Silicon-On-Insulator (FDSOI) is chosen as the ideal test vehicle, as it offers the advantage of sustaining significant stress within the channel without plastic relaxation (the thin channel staying below the critical thickness [2]). Starting from 3D mechanical simulations and piezoresistive coefficient data, an original, simple, physically-based model for holes/electrons mobility enhancement in strained devices is developed. The model is calibrated on physical measurements and electrical data of state-of-the-art devices. Non-Equilibrium Greens Function (NEGF) quantum simulations of holes/electrons stress-enhanced mobility give physical insights into mobility behavior at large stress (~3GPa). Finally, the new strained-enhanced mobility model is introduced in an industrial compact model [3] to project evaluation at the circuit level.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133683997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 24

Can piezoelectricity lead to negative capacitance? 压电会导致负电容吗?

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047046

Justin C. Wong, S. Salahuddin

引用次数: 6

Trapping and high field related issues in GaN power HEMTs 氮化镓功率hemt中的捕集和高场相关问题

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047072

G. Meneghesso, M. Meneghini, A. Chini, G. Verzellesi, E. Zanoni

引用次数: 17

High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3 gate dielectric for high-performance normally-off GaN MIS-HEMTs 高温低损伤栅极凹槽技术和臭氧辅助Al2O3生长栅极电介质用于高性能正常关闭GaN mishemt

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047071

S. Huang, Q. Jiang, K. Wei, G. Liu, X. Wang, Y. Zheng, B. Sun, C. Zhao, H. Liu, Z. Jin, X. Liu, H. Wang, S. Liu, Y. Lu, C. Liu, S. Yang, Z. Tang, J. Zhang, Y. Hao, K. J. Chen

引用次数: 46

Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm 垂直各向异性CoFeB-MgO磁性隧道结缩小到1X nm

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047160

S. Ikeda, H. Sato, H. Honjo, E. C. Enobio, S. Ishikawa, M. Yamanouchi, S. Fukami, S. Kanai, F. Matsukura, T. Endoh, H. Ohno

引用次数: 30

3D synaptic architecture with ultralow sub-10 fJ energy per spike for neuromorphic computation 三维突触结构，每峰能量低于10 fJ，用于神经形态计算

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047127

I-Ting Wang, Yen-Chuan Lin, Yu-Fen Wang, Chung-Wei Hsu, T. Hou

引用次数: 96

The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching 超晶格场效应晶体管(SLCFET):一种新型高性能晶体管拓扑结构，是射频开关的理想选择

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047033

R. Howell, E. Stewart, R. Freitag, J. Parke, B. Nechay, H. Cramer, M. King, Shalini Gupta, J. Hartman, M. Snook, I. Wathuthanthri, Parrish Ralston, K. Renaldo, H. G. Henry, R. C. Clarke

引用次数: 32

Atomic scale engineering of metal-oxide-semiconductor photoelectrodes for energy harvesting application integrated with Graphene and Epitaxy SrTiO3 集成石墨烯和外延SrTiO3的能量收集应用的金属氧化物半导体光电极的原子尺度工程

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047013

L. Ji, Martin D. McDaniel, L. Tao, Xiaohang Li, A. Posadas, Yao‐Feng Chang, A. Demkov, J. Ekerdt, D. Akinwande, R. Ruoff, Jack C. Lee, E. Yu

{"title":"Atomic scale engineering of metal-oxide-semiconductor photoelectrodes for energy harvesting application integrated with Graphene and Epitaxy SrTiO3","authors":"L. Ji, Martin D. McDaniel, L. Tao, Xiaohang Li, A. Posadas, Yao‐Feng Chang, A. Demkov, J. Ekerdt, D. Akinwande, R. Ruoff, Jack C. Lee, E. Yu","doi":"10.1109/IEDM.2014.7047013","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047013","url":null,"abstract":"In this work, hydrogen production from water is demonstrated via a p-type silicon photocathode with a thin epitaxial strontium titanate, SrTiO3 (STO), as capping layer by molecular beam epitaxy. The advantages of using STO are the ideal conduction band alignment and perfect lattice match between single crystalline SrTiO3 and Si, so the photogenerated electrons can transport through the capping layer with a reduced recombination rate. The STO/p-Si photocathode exhibited a maximum photocurrent density and open circuit potential of 35 mA/cm2 and 450 mV, respectively. There was no observable decrease in performance after 10 hr operation in 0.5M H2SO4. We found the efficiency and performance were highly dependent on the size and spacing of the structured metal catalyst. Scaled down the metal catalysts feature size into nanometer region can greatly improve the efficiency. In addition, samples with graphene (Grahene/p-Si) as the lateral transport channel and capping layer shown an enhanced fill factor compared with that of STO/p-Si.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126986610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Through silicon via (TSV) effects on devices in close proximity - the role of mobile ion penetration - characterization and mitigation 通过硅通孔(TSV)对近距离器件的影响-移动离子渗透的作用-表征和缓解

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047053

C. Kothandaraman, S. Cohen, C. Parks, J. Golz, K. Tunga, S. Rosenblatt, J. Safran, C. Collins, W. Landers, J. Oakley, J. Liu, A. Martin, K. Petrarca, M. Farooq, T. Graves-abe, N. Robson, S. Iyer

引用次数: 5