Shaofeng Guo, Ru Huang, P. Hao, Mulong Luo, P. Ren, Jianping Wang, Weihai Bu, Jingang Wu, W. Wong, Scott Yu, Hanming Wu, Shiuh-Wuu Lee, Runsheng Wang, Yangyuan Wang
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引用次数: 7
Abstract
In this paper, using DTMOS as an effective solution of RTN suppression without device/circuit performance penalty is proposed and demonstrated for the first time, with experimental verification and circuit analysis. The experiments show that RTN amplitude is greatly reduced in DTMOS mode, which is even better than the body-biasing technique of FBB, due to the efficient dynamic modulation mechanism. Circuit stability and performance degradation induced by RTN are much improved in the design using DTMOS. New characteristics of RTN physics in DTMOS are also observed and studied in detail. The results are helpful to the robust and reliable device/circuit co-design in future nano-CMOS technology.
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