2014 IEEE International Electron Devices Meeting

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2014 IEEE International Electron Devices Meeting - 最新文献

NBTI of Ge pMOSFETs: Understanding defects and enabling lifetime prediction

Pub Date : 2014-12-15 DOI: 10.1109/IEDM.2014.7047166 J. Ma, W. Zhang, J. F. Zhang, B. Benbakhti, Z. Ji, J. Mitard, J. Franco, B. Kaczer, G. Groeseneken

Hybrid CMOS/BEOL-NEMS technology for ultra-low-power IC applications

Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047130 N. Xu, Jeff Sun, I. Chen, L. Hutin, Yenhao Chen, J. Fujiki, Chuang Qian, T. Liu

Area dependence of thermal stability factor in perpendicular STT-MRAM analyzed by bi-directional data flipping model

Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047082 K. Tsunoda, M. Aoki, H. Noshiro, Y. Iba, S. Fukuda, C. Yoshida, Y. Yamazaki, A. Takahashi, A. Hatada, M. Nakabayashi, Y. Tsuzaki, T. Sugii

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