2014 IEEE International Electron Devices Meeting最新文献_第10页

Evolution of directed ion beams from doping to materials engineering 定向离子束从掺杂到材料工程的演变

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047157

A. Renau

引用次数: 1

9.74-THz electronic Far-Infrared detection using Schottky barrier diodes in CMOS 在CMOS中使用肖特基势垒二极管的9.74太赫兹电子远红外探测

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7046982

Z. Ahmad, A. Lisauskas, H. Roskos, K. O. Kenneth

引用次数: 25

Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes iii -氮化物miss - hemt和mosc - hemt的热致阈值电压不稳定性:潜在机制和优化方案

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047069

Shu Yang, Sheng-gen Liu, Cheng Liu, Zhikai Tang, Yunyou Lu, K. J. Chen

引用次数: 30

Silicon carbide power device development for industrial markets 碳化硅功率器件的工业市场开发

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7046960

J. Palmour

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引用次数: 113

Study of the piezoresistive properties of NMOS and PMOS Ω-gate SOI nanowire transistors: Scalability effects and high stress level NMOS和PMOS的压阻特性研究Ω-gate SOI纳米线晶体管:可扩展性效应和高应力水平

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047090

J. Pelloux-Prayer, M. Cassé, S. Barraud, P. Nguyen, M. Koyama, Y. Niquet, F. Triozon, I. Duchemin, A. Abisset, A. Idrissi-Eloudrhiri, S. Martinie, J. Rouviere, H. Iwai, G. Reimbold

引用次数: 8

Detecting elementary particles using hybrid pixel detectors at the lhc and beyond 在大型强子对撞机及其他地方使用混合像素探测器探测基本粒子

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047028

M. Campbell

引用次数: 4

Future challenges and opportunities for heterogeneous process technology. Towards the thin films, Zero Intrinsic Variability devices, Zero Power era 异构工艺技术的未来挑战与机遇。迈向薄膜、零内在变异性器件、零功耗时代

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047015

S. Deleonibus, O. Faynot, Thomas Ernst, M. Vinet, P. Batude, F. Andrieu, O. Weber, David K. C. Cooper, François Bertin, Hubert Moriceau, L. Dicioccio, T. Signamarcheix, M. Sanquer, X. Jehl, O. Cueto, H. Fanet, F. Martin, H. Okuno, F. Nemouchi, Gilles Poupon, Y. Lamy, D. Gasparutto, X. Baillin, L. Duraffourg, J. Arcamone, L. Perniola, B. D. Salvo, E. Vianello, L. Hutin, C. Poulain, Edith Beigne, R. Tiron, L. Pain, S. Tedesco, S. Barnola, N. Possémé, C. L. Royer, A. Villalon, R. Salot

引用次数: 5

A new saw-like self-recovery of interface states in nitride-based memory cell 氮基记忆电池中界面状态的一种新的锯齿状自恢复

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047084

Y. Sung, P. Lin, Jim Chen, Tzong-Sheng Chang, Y. King, C. Lin

引用次数: 11

Multiple breakdown phenomena and modeling for non-uniform dielectric systems 非均匀介质系统的多重击穿现象及建模

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047171

E. Wu, Baozhen Li, J. Stathis, R. Achanta

引用次数: 8

Efficient wireless power transmission technology based on above-CMOS integrated (ACI) high quality inductors 基于以上cmos集成(ACI)高质量电感的高效无线电力传输技术

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047038

S. Raju, Xing Li, Yan Lu, C. Tsui, Ki Wing-Hung, M. Chan, C. Yue

引用次数: 9