9.74-THz electronic Far-Infrared detection using Schottky barrier diodes in CMOS

Abstract

9.74-THz fundamental electronic detection of Far-Infrared (FIR) radiation is demonstrated. The detection along with that at 4.92THz was realized using Schottky-barrier diode detection structures formed without any process modifications in CMOS. Peak optical responsivity (Rv) of 383 and ~14V/W at 4.92 and 9.74THz have been measured. The Rv at 9.74THz is 14X of that for the previously reported highest frequency electronic detection. The shot noise limited NEP at 4.92 and 9.74THz is ~0.43 and ~2nW/√Hz, respectively.