定向离子束从掺杂到材料工程的演变

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI:10.1109/IEDM.2014.7047157

A. Renau

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引用次数: 1

摘要

我们回顾了最近植入物处理能力的变化，包括采用低温植入物来减少泄漏和接触电阻，以及用于finfet的高温植入物。我们讨论了一些具体的3D挑战，并介绍了一种新的3D工艺技术，该技术使用定向离子束进行材料改性，包括植入，蚀刻和沉积。

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Evolution of directed ion beams from doping to materials engineering

We review recent changes to implanter processing capabilities, including the adoption of cryogenic implants to reduce leakage and contact resistance as well as high temperature implants for finFETs. We discuss some specific 3D challenges and introduce a new process technology for 3D that uses directed ion beams for material modification including implant, etch and deposition.

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2014 IEEE International Electron Devices Meeting

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