三维突触结构，每峰能量低于10 fJ，用于神经形态计算

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI:10.1109/IEDM.2014.7047127

I-Ting Wang, Yen-Chuan Lin, Yu-Fen Wang, Chung-Wei Hsu, T. Hou

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引用次数: 96

摘要

提出了一种基于自整流Ta/TaOx/TiO2/Ti RRAM的高密度三维突触结构，作为一种节能、经济的神经形态计算硬件。该装置表现出优异的模拟突触特征，可以通过物理和紧凑的模型准确描述。与生物突触相当的超低能量消耗(< 10 fJ/spike)首次被证实。

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3D synaptic architecture with ultralow sub-10 fJ energy per spike for neuromorphic computation

A high-density 3D synaptic architecture based on self-rectifying Ta/TaOx/TiO2/Ti RRAM is proposed as an energy- and cost-efficient neuromorphic computation hardware. The device shows excellent analog synaptic features that can be accurately described by the physical and compact models. Ultra-low energy consumption comparable to that of a biological synapse (<;10 fJ/spike) has been demonstrated for the first time.

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2014 IEEE International Electron Devices Meeting

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