R. Howell, E. Stewart, R. Freitag, J. Parke, B. Nechay, H. Cramer, M. King, Shalini Gupta, J. Hartman, M. Snook, I. Wathuthanthri, Parrish Ralston, K. Renaldo, H. G. Henry, R. C. Clarke
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引用次数: 32
Abstract
NGES reports the development of a novel transistor structure based on a GaN super-lattice channel with a 3D gate, named the SLCFET (Super-Lattice Castellated Field Effect Transistor). Transistor measurements provided median values of IMAX>2.7 A/mm, VPINCH = -8V, with RON=0.41 Ω-mm and COFF=0.19 pF/mm, for an RF switch FOM of FCO=2.1 THz.
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