C. Kothandaraman, S. Cohen, C. Parks, J. Golz, K. Tunga, S. Rosenblatt, J. Safran, C. Collins, W. Landers, J. Oakley, J. Liu, A. Martin, K. Petrarca, M. Farooq, T. Graves-abe, N. Robson, S. Iyer
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引用次数: 5
Abstract
A new interaction between TSV processes and devices in close proximity, different from mechanical stress, is identified, studied and mitigated. Detailed characterization via Triangular Voltage Sweep (TVS) and SIMS shows the role of mobile ion penetration from BEOL layers. An improved process is presented and confirmed in test structures and DRAM.
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