通过硅通孔(TSV)对近距离器件的影响-移动离子渗透的作用-表征和缓解

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI:10.1109/IEDM.2014.7047053

C. Kothandaraman, S. Cohen, C. Parks, J. Golz, K. Tunga, S. Rosenblatt, J. Safran, C. Collins, W. Landers, J. Oakley, J. Liu, A. Martin, K. Petrarca, M. Farooq, T. Graves-abe, N. Robson, S. Iyer

{"title":"通过硅通孔(TSV)对近距离器件的影响-移动离子渗透的作用-表征和缓解","authors":"C. Kothandaraman, S. Cohen, C. Parks, J. Golz, K. Tunga, S. Rosenblatt, J. Safran, C. Collins, W. Landers, J. Oakley, J. Liu, A. Martin, K. Petrarca, M. Farooq, T. Graves-abe, N. Robson, S. Iyer","doi":"10.1109/IEDM.2014.7047053","DOIUrl":null,"url":null,"abstract":"A new interaction between TSV processes and devices in close proximity, different from mechanical stress, is identified, studied and mitigated. Detailed characterization via Triangular Voltage Sweep (TVS) and SIMS shows the role of mobile ion penetration from BEOL layers. An improved process is presented and confirmed in test structures and DRAM.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"82 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Through silicon via (TSV) effects on devices in close proximity - the role of mobile ion penetration - characterization and mitigation\",\"authors\":\"C. Kothandaraman, S. Cohen, C. Parks, J. Golz, K. Tunga, S. Rosenblatt, J. Safran, C. Collins, W. Landers, J. Oakley, J. Liu, A. Martin, K. Petrarca, M. Farooq, T. Graves-abe, N. Robson, S. Iyer\",\"doi\":\"10.1109/IEDM.2014.7047053\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new interaction between TSV processes and devices in close proximity, different from mechanical stress, is identified, studied and mitigated. Detailed characterization via Triangular Voltage Sweep (TVS) and SIMS shows the role of mobile ion penetration from BEOL layers. An improved process is presented and confirmed in test structures and DRAM.\",\"PeriodicalId\":309325,\"journal\":{\"name\":\"2014 IEEE International Electron Devices Meeting\",\"volume\":\"82 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2014.7047053\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

一种新的相互作用之间的TSV过程和设备在接近，不同于机械应力，被识别，研究和缓解。通过三角电压扫描(TVS)和SIMS的详细表征显示了来自BEOL层的移动离子穿透的作用。提出了一种改进的工艺，并在测试结构和DRAM中得到了验证。

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Through silicon via (TSV) effects on devices in close proximity - the role of mobile ion penetration - characterization and mitigation

A new interaction between TSV processes and devices in close proximity, different from mechanical stress, is identified, studied and mitigated. Detailed characterization via Triangular Voltage Sweep (TVS) and SIMS shows the role of mobile ion penetration from BEOL layers. An improved process is presented and confirmed in test structures and DRAM.

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2014 IEEE International Electron Devices Meeting

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