SPIE Photomask Technology最新文献_第3页

Imaging enhancement by reduction of mask topography induced phase aberrations for horizontal 1D spaces under D90Y illumination D90Y光照下水平一维空间掩膜形貌相位像差降低的成像增强技术

SPIE Photomask Technology Pub Date : 2015-10-23 DOI: 10.1117/12.2196800

T. Last, L. de Winter, J. Finders

{"title":"Imaging enhancement by reduction of mask topography induced phase aberrations for horizontal 1D spaces under D90Y illumination","authors":"T. Last, L. de Winter, J. Finders","doi":"10.1117/12.2196800","DOIUrl":"https://doi.org/10.1117/12.2196800","url":null,"abstract":"EUV reticles need to be considered as complex optical elements in the beam path with considerable impact on lithography. Here we present a work flow for absorber optimization by applying a complementary approach of investigating lithographic metrics and mask-topography induced phase aberrations. In the first part this complementary approach is applied to find an optimum thickness of a typical Ta-based absorber for imaging horizontal spaces through pitch. And although an absorber thickness of around 70 nm is found to be preferable for this particular application, the thickness choice leads to conflicting results for the general printability of 10 nm technology node features. Hence we show that a moderate reduction of the absorber thickness can be allowed when the mask bias of these features is optimized appropriately. The moderate thickness reduction already allows for the mitigation of some of the conflicting imaging aspects. In the second part we expand the workflow by analyzing phase aberrations in n & k material space. This phase-based optical property screening shows that an alternative absorber based on materials such as Ni with k higher than Ta show superior best focus and contrast metrics. These alternative absorber embodiments would allow the overall reduction of M3D effects and adverse application dependencies of current Ta-based absorbers due to a combination of thickness reduction and enhancement of absorption.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"224 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115178506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

Exposure characterizations of polymer type electron beam resists with various molecular weights for next-generation photomask 新一代光掩膜中不同分子量聚合物型电子束抗蚀剂的曝光特性

SPIE Photomask Technology Pub Date : 2015-10-23 DOI: 10.1117/12.2196942

T. Takayama, H. Asada, Yukiko Kishimura, R. Hoshino, Atsushi Kawata

{"title":"Exposure characterizations of polymer type electron beam resists with various molecular weights for next-generation photomask","authors":"T. Takayama, H. Asada, Yukiko Kishimura, R. Hoshino, Atsushi Kawata","doi":"10.1117/12.2196942","DOIUrl":"https://doi.org/10.1117/12.2196942","url":null,"abstract":"Higher resolution is eagerly requested to the electron beam resist for the next generation photomask production as well as higher sensitivity. The performance of a polymer resist is mainly characterized by its chemical structure and molecular weight. Positive tone polymer resists with various molecular weights ranging from 60 k to 500 k are synthesized and the molecular weight dependence on exposure characteristics is examined by fabricating line-and-space patterns. The molecular weight dependence of sensitivity for amyl acetate developer is small in the molecular weight range in this study. In a low molecular weight resist, the cross-section profile of the resist pattern becomes rounder and then the disconnections are observed in the 20-nm line-and-space pattern. Although the pattern width change by changing the exposure dose for each resist is quite similar, the exposure dose margin of pattern formation becomes wider with the higher molecular weight. The line width roughness is smaller in a high molecular weight resist than in a low molecular weight resist. The shift amount of the pattern width from the design value for various line-and-space patterns and the dry etching resistance to CF4 plasma are also presented.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122026913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Wafer weak point detection based on aerial images or WLCD 基于航拍图像或WLCD的薄弱点检测

SPIE Photomask Technology Pub Date : 2015-10-23 DOI: 10.1117/12.2197025

Guoxiang Ning, P. Philipp, L. Litt, Paul W. Ackmann, C. Crell, Norman Chen

{"title":"Wafer weak point detection based on aerial images or WLCD","authors":"Guoxiang Ning, P. Philipp, L. Litt, Paul W. Ackmann, C. Crell, Norman Chen","doi":"10.1117/12.2197025","DOIUrl":"https://doi.org/10.1117/12.2197025","url":null,"abstract":"Aerial image measurement is a key technique for model based optical proximity correction (OPC) verification. Actual aerial images obtained by AIMS (aerial image measurement system) or WLCD (wafer level critical dimension) can detect printed wafer weak point structures in advance of wafer exposure and defect inspection. Normally, the potential wafer weak points are determined based on optical rule check (ORC) simulation in advance. However, the correlation to real wafer weak points is often not perfect due to the contribution of mask three dimension (M3D) effects, actual mask errors, and scanner lens effects. If the design weak points can accurately be detected in advance, it will reduce the wafer fab cost and improve cycle time. WLCD or AIMS tools are able to measure the aerial images CD and bossung curve through focus window. However, it is difficult to detect the wafer weak point in advance without defining selection criteria. In this study, wafer weak points sensitive to mask mean-to-nominal values are characterized for a process with very high MEEF (normally more than 4). Aerial image CD uses fixed threshold to detect the wafer weak points. By using WLCD through threshold and focus window, the efficiency of wafer weak point detection is also demonstrated. A novel method using contrast range evaluation is shown in the paper. Use of the slope of aerial images for more accurate detection of the wafer weak points using WLCD is also discussed. The contrast range can also be used to detect the wafer weak points in advance. Further, since the mean to nominal of the reticle contributes to the effective contrast range in a high MEEF area this work shows that control of the mask error is critical for high MEEF layers such as poly, active and metal layers. Wafer process based weak points that cannot be detected by wafer lithography CD or WLCD will be discussed.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121156199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rule-based OPC and MPC interaction for implant layers 植入层基于规则的OPC和MPC交互

SPIE Photomask Technology Pub Date : 2015-10-23 DOI: 10.1117/12.2197195

N. Fu, Guoxiang Ning, F. Werle, S. Roling, S. Hecker, Paul W. Ackmann, Christian Buergel

{"title":"Rule-based OPC and MPC interaction for implant layers","authors":"N. Fu, Guoxiang Ning, F. Werle, S. Roling, S. Hecker, Paul W. Ackmann, Christian Buergel","doi":"10.1117/12.2197195","DOIUrl":"https://doi.org/10.1117/12.2197195","url":null,"abstract":"Implant layers must cover both logic and SRAM devices with good fidelity even if feature density and pitch differ very much. The coverage design rules of implant layers for SRAM and logic to active layer can vary. Lithography targeting could be problematic, since it may cause issues of either over exposure in logic area or under exposure in SRAM area. The rule-based (RB) re-targeting in the SRAM issue features is to compensate the under exposure in SRAM area. However, the global sizing in SRAM may introduce some bridge issues. Selective targeting and communicating with active layer is necessary. Another method is to achieve different mean-to-nominal (MTN) in some special areas during the reticle process. Such implant wafer issues can also be resolved during the lithography and mask optimized data preparing flow or named as lithography tolerance mask process correction (MPC). In this manuscript, this conventional issue will be demonstrated which is either over exposure in logic area or under exposure in bitcell area. The selective rule-based re-targeting concerning active layer will also be discussed, together with the improved wafer CDSEM data. The alternative method is to achieve different mean-to-nominal in different reticle areas which can be realized by lithography tolerance MPC during reticle process. The investigation of alternative methods will be presented, as well as the trade-off between them to improve the wafer uniformity and process margin of implant layers.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"239 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115888687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Contour-based two-dimension mask pattern metrology 基于轮廓的二维掩模模式计量

SPIE Photomask Technology Pub Date : 2015-10-23 DOI: 10.1117/12.2196066

Mingjing Tian, Jianwei Wang, H. Bandoh, Eric Guo, Max Lu

{"title":"Contour-based two-dimension mask pattern metrology","authors":"Mingjing Tian, Jianwei Wang, H. Bandoh, Eric Guo, Max Lu","doi":"10.1117/12.2196066","DOIUrl":"https://doi.org/10.1117/12.2196066","url":null,"abstract":"Mask pattern measurement becomes one of the main challenges for the quality evaluation of the mask which is applied with complex lithography optical effect correction. Traditional straight edge mask pattern is evaluated with 1-dimension Critical Dimension (CD) method. But for 2-dimension pattern especially the mask full filled with complex shapes OPC pattern, many special approaches are studied attempt to characterize 2D pattern from different points of view [1-5]. A simple CD’s information and the traditional mask performance evaluation parameters, such as CD mean-to-target and CD uniformity, are no longer suitable to such 2D pattern due to lacking of the pattern’s character descriptions. Therefore the CD performances may not represent the actual wafer printing result in many cases. In addition, non-straight pattern edge induces significant CD measure error which makes it difficult to clarify the real mask pattern making quality. This paper investigates a pattern contour based solution for 2D structure performance evaluation. The basic contours of GDS and CD-SEM image are extracted, overlapped and processed and then the edge roughness of SEM contour and the bias between the above two kinds of contour are adopted on 2D individual pattern performance’s statistics. By utilizing this solution, the 2D pattern quality can be described quantitatively as two main aspects, shape and size with the results of edge roughness and bias. Generalize this solution, the 2D pattern’s uniformity, mean size, or other performances, can be evaluated quantitatively in the similar way as well. This solution calculation bases on pattern contour, therefore the measure pattern is not restricted by its shape.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127424281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Pattern inspection of etched multilayer EUV mask 刻蚀多层EUV掩模的图案检测

SPIE Photomask Technology Pub Date : 2015-10-23 DOI: 10.1117/12.2203123

S. Iida, R. Hirano, Tsuyoshi Amano, Hidehiro Watanabe

{"title":"Pattern inspection of etched multilayer EUV mask","authors":"S. Iida, R. Hirano, Tsuyoshi Amano, Hidehiro Watanabe","doi":"10.1117/12.2203123","DOIUrl":"https://doi.org/10.1117/12.2203123","url":null,"abstract":"Patterned mask inspection for an etched multilayer (ML) EUV mask was investigated. In order to optimize the mask structure from the standpoint of not only a pattern inspection by using a projection electron microscope (PEM), but also by considering the other fabrication processes using electron beam (EB) techniques such as CD metrology and mask repair, we employed a conductive layer between the ML and substrate. By measuring the secondary electron emission coefficients (SEECs) of the candidate materials for conductive layer, we evaluated the image contrast and the influence of charging effect. In the cases of 40-pair-ML, 16 nm sized extrusion and intrusion defects were found to be detectable more than 10 sigma in hp 44 nm, 40 nm, and 32 nm line and space (L/S) patterns. Reducing 40-pair-ML to 20-pair-ML degraded the image contrast and the defect detectability. However, by selecting B4C as a conductive layer, 16 nm sized defects remained detectable. These defects were also detected after the etched part was refilled with Si. Moreover, the simulation shows a high sensitivity for detecting the residual-type defects (etching residues). A double layer structure with 2.5-nm-thik B4C on metal film used as a conductive layer was found to have sufficient conductivity and also was found to be free from the surface charging effect and influence of native oxide.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"9635 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129568657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A study of reticle CD behavior for inter-area pattern loading difference 区域间模式加载差异下光栅CD行为的研究

SPIE Photomask Technology Pub Date : 2015-10-23 DOI: 10.1117/12.2196988

Sung-Jip Kim, K. Lee, Jong-In Yim, Hyunjoong Kim, Sukwhan Kim, S. Shin, W. Choi, Jinhee Jung, Kyungwha Chun, Inja Lee, Jooyoung Lee, Hyeongsun Hong, Gyoyoung Jin

引用次数: 0

In die mask overlay control for 14nm double-patterning lithography 14nm双模光刻模内掩模覆盖控制

SPIE Photomask Technology Pub Date : 2015-10-23 DOI: 10.1117/12.2196794

William Chou, James Cheng, Alex C. Tseng, J. K. Wu, Chin Kuei Chang, J. Cheng, Adder Lee, C. Huang, Nanyun Peng, Simon C. C. Hsu, Chun-Chi Yu, Colbert Lu, Julia Yu, P. Craig, Chuck Pollock, Y. Ham, J. McMurran

{"title":"In die mask overlay control for 14nm double-patterning lithography","authors":"William Chou, James Cheng, Alex C. Tseng, J. K. Wu, Chin Kuei Chang, J. Cheng, Adder Lee, C. Huang, Nanyun Peng, Simon C. C. Hsu, Chun-Chi Yu, Colbert Lu, Julia Yu, P. Craig, Chuck Pollock, Y. Ham, J. McMurran","doi":"10.1117/12.2196794","DOIUrl":"https://doi.org/10.1117/12.2196794","url":null,"abstract":"According to the ITRS roadmap, semiconductor industry drives the 193nm lithography to its limits, using techniques like Double Pattern Technology (DPT), Source Mask Optimization (SMO) and Inverse Lithography Technology (ILT). In terms of considering the photomask metrology, full in-die measurement capability is required for registration and overlay control with challenging specifications for repeatability and accuracy. Double patterning using 193nm immersion lithography has been adapted as the solution to enable 14nm technology nodes. The overlay control is one of the key figures for the successful realization of this technology. In addition to the various error contributions from the wafer scanner, the reticles play an important role in terms of considering lithographic process contributed errors. Accurate pattern placement of the features on reticles with a registration error below 4nm is mandatory to keep overall photomask contributions to overlay of sub 20nm logic within the allowed error budget. In this paper, we show in-die registration errors using 14nm DPT product masks, by measuring in-die overlay patterns comparing with regular registration patterns. The mask measurements are used to obtain an accurate model to predict mask contribution on wafer overlay of double patterning technology.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132747367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DUV inspection tool application for beyond optical resolution limit pattern 超光学分辨率极限图样DUV检测工具的应用

SPIE Photomask Technology Pub Date : 2015-10-23 DOI: 10.1117/12.2197890

H. Inoue, N. Kikuiri, H. Tsuchiya, R. Ogawa, I. Isomura, T. Hirano, R. Yoshikawa

引用次数: 7

The capability of lithography simulation based on MVM-SEM® system 基于MVM-SEM®系统的光刻仿真能力

SPIE Photomask Technology Pub Date : 2015-10-23 DOI: 10.1117/12.2197818

S. Yoshikawa, N. Fujii, K. Kanno, Hidemichi Imai, K. Hayano, H. Miyashita, S. Shida, T. Murakawa, M. Kuribara, J. Matsumoto, Takayuki Nakamura, S. Matsushita, Daisuke Hara, L. Pang

{"title":"The capability of lithography simulation based on MVM-SEM® system","authors":"S. Yoshikawa, N. Fujii, K. Kanno, Hidemichi Imai, K. Hayano, H. Miyashita, S. Shida, T. Murakawa, M. Kuribara, J. Matsumoto, Takayuki Nakamura, S. Matsushita, Daisuke Hara, L. Pang","doi":"10.1117/12.2197818","DOIUrl":"https://doi.org/10.1117/12.2197818","url":null,"abstract":"The 1Xnm technology node lithography is using SMO-ILT, NTD or more complex pattern. Therefore in mask defect inspection, defect verification becomes more difficult because many nuisance defects are detected in aggressive mask feature. One key Technology of mask manufacture is defect verification to use aerial image simulator or other printability simulation. AIMS™ Technology is excellent correlation for the wafer and standards tool for defect verification however it is difficult for verification over hundred numbers or more. We reported capability of defect verification based on lithography simulation with a SEM system that architecture and software is excellent correlation for simple line and space.[1] In this paper, we use a SEM system for the next generation combined with a lithography simulation tool for SMO-ILT, NTD and other complex pattern lithography. Furthermore we will use three dimension (3D) lithography simulation based on Multi Vision Metrology SEM system. Finally, we will confirm the performance of the 2D and 3D lithography simulation based on SEM system for a photomask verification.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125170646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1