SPIE Photomask Technology最新文献_第10页

The behavior of substrate dependency as surface treatment in the positive chemically amplified resist 化学放大抗蚀剂表面处理中基质依赖性的行为

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.746652

Sin-Ju Yang, H. Cha, Juhyun Kang, Chul-Kyu Yang, Jinhyeok Ahn, K. Nam

{"title":"The behavior of substrate dependency as surface treatment in the positive chemically amplified resist","authors":"Sin-Ju Yang, H. Cha, Juhyun Kang, Chul-Kyu Yang, Jinhyeok Ahn, K. Nam","doi":"10.1117/12.746652","DOIUrl":"https://doi.org/10.1117/12.746652","url":null,"abstract":"Positive chemically amplified resist (CAR) is widely used because of its benefit to high resolution in the semiconductor industry. Recent numerous studies have reported that resist pattern error such as resist scum and adhesion fail at the interface between substrate and positive CAR is caused by substrate dependency. Hence resist pattern error must be minimized. In this study we have observed the phenomena at the positive CAR coated mask blanks. And then we applied various surface treatments to the Cr film to minimize resist pattern error. Firstly, resist pattern error was occurred by the substrate dependency in the positive CAR coated mask blanks. We have investigated the root causes of this pattern error, we found that nitrogen radical and OH radical in the Cr film could combine with proton in the positive CAR easily. So various surface treatments were applied to minimize detrimental effects of substrate dependency to the positive CAR. And the behavior of substrate dependency was observed by various analyses to verify the effect of surface treatment method. The results showed that substrate dependency could be controlled by surface treatment in the positive CAR coated mask blanks.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132471484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Estimating DPL photomask fabrication load compared with single exposure 估计DPL光掩模制造负荷与单次曝光的比较

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.746982

Nobuhito Toyama, Yuichi Inazuki, T. Sutou, Takaharu Nagai, Yasutaka Morikawa, H. Mohri, N. Hayashi, Judy A. Huckabay, Yoshikuni Abe

引用次数: 3

A pragmatic approach to high sensitivity defect inspection in the presence of mask process variability 一个实用的方法，以高灵敏度缺陷检测的存在掩模过程可变性

SPIE Photomask Technology Pub Date : 2007-10-25 DOI: 10.1117/12.746567

S. Han, Jin Hyung Park, Dong-Hoon Chung, S. Woo, Han-ku Cho, David Kim, Chunlin Chen, K. Park, Gregg Inderhees

{"title":"A pragmatic approach to high sensitivity defect inspection in the presence of mask process variability","authors":"S. Han, Jin Hyung Park, Dong-Hoon Chung, S. Woo, Han-ku Cho, David Kim, Chunlin Chen, K. Park, Gregg Inderhees","doi":"10.1117/12.746567","DOIUrl":"https://doi.org/10.1117/12.746567","url":null,"abstract":"As design rules continue to shrink towards 4x nm, there are increase usage of aggressive Optical Proximity Correction (OPC) in reticle manufacturing. One of the most challenging aggressive OPCs is Sub Resolution Assist Feature (SRAF) such as scattering and anti-scattering bars typically used to overlap isolated and dense feature process windows. These SRAF features are sub-resolution in that these features intentionally do not resolve on the printed wafer. Many reticle manufacturers struggle to write these SRAFs with consistent edge quality even the most advanced E-Beam writers and processes due to resolution limitations. Consequently, this inconsistent writing gives reticle inspection challenges. Large numbers of such nuisance defects can dominate the inspection and impose an extraordinarily high burden on the operator reviewing these defects. One method to work around inconsistent assist feature edge quality or line-end shortening is to adjust the mask inspection system so that there is a substantial sensitivity decrease in order to achieve good inspectability, which then compromises the sensitivity for the defects on main geometries. Modern defect inspection tools offer multiple modes of operation that can be effectively applied to optimize defect sensitivity in the presence of SRAF feature variability. This paper presents the results of an evaluation of advance inspection methods and modes such as die to database selective thinline desense, transmitted & reflected light inspections, review system and die to die selective desense to increase inspectability and usable sensitivity using challenging production and R&D masks. Key learnings are discussed.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"228 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114472476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Inspection results for 32nm logic and sub-50nm half-pitch memory reticles using the TeraScanHR 使用TeraScanHR检测32nm逻辑和50nm以下半间距存储器线的结果

SPIE Photomask Technology Pub Date : 2007-10-25 DOI: 10.1117/12.747295

Jean-Paul Sier, William H. Broadbent, F. Mirzaagha, Paul Yu

引用次数: 3

Mask inspection method for 45nm node device 45nm节点器件掩模检测方法

SPIE Photomask Technology Pub Date : 2007-10-25 DOI: 10.1117/12.746864

Sunghyun Oh, Yongkyoo Choi, Daeho Hwang, Goomin Jeong, O. Han

引用次数: 1

Compensating for image placement errors induced during the fabrication and chucking of EUVL masks 补偿在制造和夹紧EUVL掩模期间引起的图像放置误差

SPIE Photomask Technology Pub Date : 2007-10-24 DOI: 10.1117/12.752601

R. Engelstad, J. Sohn, A. Mikkelson, M. Nataraju, K. Turner

引用次数: 6

Advanced mask particle cleaning solutions 先进的掩膜颗粒清洁解决方案

SPIE Photomask Technology Pub Date : 2007-10-05 DOI: 10.1117/12.746748

Tod E. Robinson, Andrew Dinsdale, Ron Bozak, Bernie Arruza

引用次数: 10

Impact of mask absorber properties on printability in EUV lithography 极紫外光刻中掩膜吸收性能对印刷适性的影响

SPIE Photomask Technology Pub Date : 2007-10-05 DOI: 10.1117/12.746550

T. Kamo, H. Aoyama, Toshihiko Tanaka, Osamu Suga

引用次数: 28

A method to determine the origin of remaining particles after mask blank cleaning 一种确定掩模空白清洗后残留颗粒来源的方法

SPIE Photomask Technology Pub Date : 2007-10-05 DOI: 10.1117/12.746798

V. Kapila, S. Eichenlaub, A. Rastegar, A. John, Pat Marmillion

{"title":"A method to determine the origin of remaining particles after mask blank cleaning","authors":"V. Kapila, S. Eichenlaub, A. Rastegar, A. John, Pat Marmillion","doi":"10.1117/12.746798","DOIUrl":"https://doi.org/10.1117/12.746798","url":null,"abstract":"Extreme ultraviolet lithography (EUVL) is a strong contender for the 32 nm generation and beyond. A defect-free mask substrate is an absolute necessity for manufacturing EUV mask blanks. The mask blank substrates are, therefore, cleaned with different cleaning processes to remove all defects down to 30 nm. However, cleaning suffers from the defects added by various sources such as the fab environment, chemicals, ultra pure water, and the cleaning process itself. The charge state of the substrate during and after cleaning also contributes to the number of adder defects on the substrate. The zeta potentials on the substrate surface and the defect particles generated during the cleaning process determine whether the particles get deposited on the surface. The zeta potential of particle or substrate surfaces depends on the pH of the cleaning fluids. Therefore, in this work, pH-zeta potential maps are generated for quartz substrates during the various steps of mask cleaning processes. The pH-zeta potential maps for defect particles commonly seen on mask substrates are measured separately. The zeta potential maps of substrate and contaminant particle surfaces are used to determine whether particles are attracted to or repulsed from the substrate. In practice, this technique is especially powerful for deriving information about the origin of particles added during a cleaning process. For example, for a known adder with a negative zeta potential, all cleaning steps with a positive zeta potential substrate could be the source of added particles.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"46 24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124666386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

The impact of mask photoresist develop on critical dimension parameters 掩膜光刻胶显影对关键尺寸参数的影响

SPIE Photomask Technology Pub Date : 2007-10-05 DOI: 10.1117/12.747605

Adam C. Smith, D. Sullivan, K. Sugawara, Y. Okawa

引用次数: 1