SPIE Photomask Technology最新文献_第9页

Accurate lithography analysis for yield prediction 精确的光刻分析用于良率预测

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.746797

G. Yeric, Babak Hatamian, R. Kapoor

引用次数: 0

Repairing 45 nm node defects through nano-machining 利用纳米加工修复45纳米节点缺陷

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.748668

R. White, Andrew Dinsdale, Tod E. Robinson, D. Brinkley, Jeffrey E. Csuy, David W. Lee

引用次数: 1

Intel's AMT enables rapid processing and info-turn for Intel's DFM test chip vehicle 英特尔的AMT为英特尔的DFM测试芯片车辆提供了快速处理和信息转换

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.746844

H. Hajj

引用次数: 3

Investigation of mask defectivity in full field EUV lithography 全视场EUV光刻掩模缺陷的研究

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.746566

R. Jonckheere, F. Iwamoto, G. Lorusso, A. Goethals, K. Ronse, H. Koop, T. Schmoeller

{"title":"Investigation of mask defectivity in full field EUV lithography","authors":"R. Jonckheere, F. Iwamoto, G. Lorusso, A. Goethals, K. Ronse, H. Koop, T. Schmoeller","doi":"10.1117/12.746566","DOIUrl":"https://doi.org/10.1117/12.746566","url":null,"abstract":"A detailed defect printability analysis is reported for conditions that are fully representative for the world's first full field EUV scanner, using 4X reticles, as obtained by simulation. For absorber type defects the historical rule of thumb underestimates the printability. An opaque defect located in a space within a 40nm lines and space pattern can already cause more than a 10% change in the space width from 80% of the space width onwards (>32nm at mask scale, >8 nm at wafer scale) depending on its location. Absorber type clear defects start affecting line width in 40nm lines and spaces from about twice the size of an opaque defect. Particles simulated as carbon cubes have a similar effect as absorber type opaque defects provided that they are about 50% larger. Other possible particle materials are investigated as well. Local carbon deposition, which may originate from SEM inspection, can cause a printing effect already at a thickness of only 2nm. Multilayer or substrate type defects require surface smoothing to less than about 2nm, as to keep the impact of so-called phase defects under control. Experimental plans for comparison of simulations to exposures on the ASML Alpha Demo Tool installed at IMEC are included.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"255 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123605763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 21

Polygon-based compensation of proximity and density effects in photomask processes 基于多边形的掩模加工中邻近和密度效应补偿

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.746796

K. Kageyama, Katsuyuki Miyoko, Y. Okuda, G. Perçin, A. Sezginer, J. Carrero, Alan Zhu, Anwei Liu

引用次数: 3

Validation of a fast and accurate 3D mask model for SRAF printability analysis at 32nm node 验证用于 32 纳米节点 SRAF 印刷适性分析的快速准确 3D 掩模模型

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.746704

Peng Liu, Christian Zuniga, Zhongtuan Ma, Hanying Feng

引用次数: 4

Compositional analysis of progressive defects on a photomask 光掩模上递进缺陷的成分分析

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.746375

K. Saga, H. Kawahira

引用次数: 2

Etch proximity correction by integrated model-based retargeting and OPC flow 基于模型的再定位和OPC流集成蚀刻邻近校正

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.746773

Shumay Dou Shang, Y. Granik, M. Niehoff

引用次数: 16

Automatic assist feature placement optimization based on process-variability reduction 基于过程可变性减少的自动辅助特征放置优化

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.748035

Srividya Jayaram, A. Yehia, M. Bahnas, Hesham A. Maaty Omar, Z. Bozkus, J. Sturtevant

{"title":"Automatic assist feature placement optimization based on process-variability reduction","authors":"Srividya Jayaram, A. Yehia, M. Bahnas, Hesham A. Maaty Omar, Z. Bozkus, J. Sturtevant","doi":"10.1117/12.748035","DOIUrl":"https://doi.org/10.1117/12.748035","url":null,"abstract":"To maximize the process window and CD control of main features, sizing and placement rules for sub-resolution assist features (SRAF) need to be optimized, subject to the constraint that the SRAFs not print through the process window. With continuously shrinking target dimensions, generation of traditional rule-based SRAFs is becoming an expensive process in terms of time, cost and complexity. This has created an interest in other rule optimization methodologies, such as image contrast and other edge- and image-based objective functions. In this paper, we propose using an automated model-based flow to obtain the optimal SRAF insertion rules for a design and reduce the time and effort required to define the best rules. In this automated flow, SRAF placement is optimized by iteratively generating the space-width rules and assessing their performance against process variability metrics. Multiple metrics are used in the flow. Process variability (PV) band thickness is a good indicator of the process window enhancement. Depth of focus (DOF), the total range of focus that can be tolerated, is also a highly descriptive metric for the effectiveness of the sizing and placement rules generated. Finally, scatter bar (SB) printing margin calculations assess the allowed exposure range that prevents scatter bars from printing on the wafer.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123848924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Improving the CD linearity and proximity performance of photomasks written on the Sigma7500-II DUV laser writer through embedded OPC 通过嵌入式OPC提高Sigma7500-II DUV激光书写器上光掩模的CD线性度和接近性能

SPIE Photomask Technology Pub Date : 2007-10-30 DOI: 10.1117/12.747074

Anders Österberg, Lars Ivansen, Angela Beyerl, T. Newman, A. Bowhill, E. Sahouria, S. Schulze

{"title":"Improving the CD linearity and proximity performance of photomasks written on the Sigma7500-II DUV laser writer through embedded OPC","authors":"Anders Österberg, Lars Ivansen, Angela Beyerl, T. Newman, A. Bowhill, E. Sahouria, S. Schulze","doi":"10.1117/12.747074","DOIUrl":"https://doi.org/10.1117/12.747074","url":null,"abstract":"Optical proximity correction (OPC) is widely used in wafer lithography to produce a printed image that best matches the design intent while optimizing CD control. OPC software applies corrections to the mask pattern data, but in general it does not compensate for the mask writer and mask process characteristics. The Sigma7500-II deep-UV laser mask writer projects the image of a programmable spatial light modulator (SLM) using partially coherent optics similar to wafer steppers, and the optical proximity effects of the mask writer are in principle correctable with established OPC methods. To enhance mask patterning, an embedded OPC function, LinearityEqualizeTM, has been developed for the Sigma7500- II that is transparent to the user and which does not degrade mask throughput. It employs a CalibreTM rule-based OPC engine from Mentor Graphics, selected for the computational speed necessary for mask run-time execution. A multinode cluster computer applies optimized table-based CD corrections to polygonized pattern data that is then fractured into an internal writer format for subsequent data processing. This embedded proximity correction flattens the linearity behavior for all linewidths and pitches, which targets to improve the CD uniformity on production photomasks. Printing results show that the CD linearity is reduced to below 5 nm for linewidths down to 200 nm, both for clear and dark and for isolated and dense features, and that sub-resolution assist features (SRAF) are reliably printed down to 120 nm. This reduction of proximity effects for main mask features and the extension of the practical resolution for SRAFs expands the application space of DUV laser mask writing.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127335388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0