Accurate lithography analysis for yield prediction

G. Yeric, Babak Hatamian, R. Kapoor
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Abstract

New DFM tools appearing on the market hold a promise of assessing parametric and functional yield loss due to lithography effects. The accuracy of underlying models can limit the veracity of such assessment. For example, many lithography steps used in the fab are extremely nonlinear and might exhibit significant differences from models used by the DFM tools. Furthermore, inputs used in calibrating a model can limit its accuracy, and most organizations are challenged to characterize the exact needs of a lithography model at a statistically relevant sampling size. After discussing potential sources of inaccuracy in modeling, the paper will describe a methodology for modeling and yield prediction based on such accurate modeling.
精确的光刻分析用于良率预测
市场上出现的新DFM工具有望评估光刻效应造成的参数和功能收率损失。基础模型的准确性可能会限制这种评估的准确性。例如,在晶圆厂中使用的许多光刻步骤是非常非线性的,并且可能与DFM工具使用的模型表现出显着差异。此外,用于校准模型的输入可能会限制其准确性,并且大多数组织都面临着以统计相关的抽样大小来描述光刻模型的确切需求的挑战。在讨论了建模不准确的潜在来源之后,本文将描述一种基于这种精确建模的建模和产量预测方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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