Compositional analysis of progressive defects on a photomask

Abstract

Progressive mask defects are a critical mask-reliability issue in DUV lithography. It is well known that the majority of the defects are ammonium sulfates. We have found using ToF-SIMS that metallic atoms are localized at ammonium-sulfate defects on the mask surface, can influence the growth of the defects. Carbon compounds containing nitrogen atoms are also localized at the some defects. These carbon compounds are the result of the adsorption of organic volatiles outgassing from a reticle SMIF pod. Metal residues and organic contamination on a photomask as well as airborne acidic and basic contamination must be controlled to avoid progressive defects on photomasks.