Repairing 45 nm node defects through nano-machining

R. White, Andrew Dinsdale, Tod E. Robinson, D. Brinkley, Jeffrey E. Csuy, David W. Lee
{"title":"Repairing 45 nm node defects through nano-machining","authors":"R. White, Andrew Dinsdale, Tod E. Robinson, D. Brinkley, Jeffrey E. Csuy, David W. Lee","doi":"10.1117/12.748668","DOIUrl":null,"url":null,"abstract":"Recently questions have been raised about whether high aspect ratio (HAR) NanoBitsTM can be effectively utilized to repair extension defects in 45 nm node and beyond. The primary concern has been how the effect of NanoBitTM deflection impacts edge placement, sidewall angle and z-depth control repeatability. Higher aspect ratio bits are required for defects that arise as mask feature sizes become smaller. As the aspect ratio of the NanoBitTM continues to increase to meet these demands, the cross sectional area of the bit used for nanomachining becomes thinner and more susceptible to bending under the forces applied during the nanomachining process. This is especially true when deeper features that require HAR NanoBitsTM are being repaired. To overcome this trend RAVE LLC has developed a new repair process that utilizes the strength of the bit shape. Repair of 45 nm node defects that require HAR NanoBitsTM will be demonstrated using a new repair process and cantilever design.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Photomask Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.748668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Recently questions have been raised about whether high aspect ratio (HAR) NanoBitsTM can be effectively utilized to repair extension defects in 45 nm node and beyond. The primary concern has been how the effect of NanoBitTM deflection impacts edge placement, sidewall angle and z-depth control repeatability. Higher aspect ratio bits are required for defects that arise as mask feature sizes become smaller. As the aspect ratio of the NanoBitTM continues to increase to meet these demands, the cross sectional area of the bit used for nanomachining becomes thinner and more susceptible to bending under the forces applied during the nanomachining process. This is especially true when deeper features that require HAR NanoBitsTM are being repaired. To overcome this trend RAVE LLC has developed a new repair process that utilizes the strength of the bit shape. Repair of 45 nm node defects that require HAR NanoBitsTM will be demonstrated using a new repair process and cantilever design.
利用纳米加工修复45纳米节点缺陷
高纵横比(HAR)纳米obitstm能否有效修复45 nm及以上节点的延伸缺陷是近年来人们提出的一个问题。主要关注的是NanoBitTM偏转如何影响边缘放置,侧壁角和z-depth控制的可重复性。由于掩模特征尺寸变小而产生的缺陷需要更高的宽高比位。随着纳米obittm的纵横比不断增加以满足这些要求,用于纳米加工的钻头的横截面积变得更薄,并且在纳米加工过程中施加的力下更容易弯曲。当需要HAR纳米obitstm的深层特征正在修复时,尤其如此。为了克服这一趋势,RAVE LLC开发了一种利用钻头形状强度的新型修复工艺。需要HAR纳米obitstm的45 nm节点缺陷的修复将使用新的修复工艺和悬臂设计进行演示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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