化学放大抗蚀剂表面处理中基质依赖性的行为

Sin-Ju Yang, H. Cha, Juhyun Kang, Chul-Kyu Yang, Jinhyeok Ahn, K. Nam
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引用次数: 0

摘要

正化学放大抗蚀剂(CAR)因其对高分辨率的优势在半导体工业中得到了广泛的应用。最近的大量研究报道了基底与正极CAR之间的界面上的抵抗模式错误,如抵抗浮渣和粘附失败是由基底依赖性引起的。因此,电阻模式误差必须最小化。在本研究中,我们观察到在正CAR涂层掩模坯上的现象。然后我们对铬膜进行了各种表面处理,以尽量减少抗蚀图案误差。首先,由于衬底的依赖性,在正极CAR涂层掩模坯中产生了抗蚀图案误差。我们研究了这种模式错误的根本原因,我们发现Cr膜中的氮自由基和OH自由基很容易与正极CAR中的质子结合。因此,采用了各种表面处理,以尽量减少基质依赖对阳性CAR的有害影响。并通过各种分析观察了基体依赖行为,验证了表面处理方法的效果。结果表明,通过表面处理可以控制对基质的依赖。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The behavior of substrate dependency as surface treatment in the positive chemically amplified resist
Positive chemically amplified resist (CAR) is widely used because of its benefit to high resolution in the semiconductor industry. Recent numerous studies have reported that resist pattern error such as resist scum and adhesion fail at the interface between substrate and positive CAR is caused by substrate dependency. Hence resist pattern error must be minimized. In this study we have observed the phenomena at the positive CAR coated mask blanks. And then we applied various surface treatments to the Cr film to minimize resist pattern error. Firstly, resist pattern error was occurred by the substrate dependency in the positive CAR coated mask blanks. We have investigated the root causes of this pattern error, we found that nitrogen radical and OH radical in the Cr film could combine with proton in the positive CAR easily. So various surface treatments were applied to minimize detrimental effects of substrate dependency to the positive CAR. And the behavior of substrate dependency was observed by various analyses to verify the effect of surface treatment method. The results showed that substrate dependency could be controlled by surface treatment in the positive CAR coated mask blanks.
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