Exposure characterizations of polymer type electron beam resists with various molecular weights for next-generation photomask

Higher resolution is eagerly requested to the electron beam resist for the next generation photomask production as well as higher sensitivity. The performance of a polymer resist is mainly characterized by its chemical structure and molecular weight. Positive tone polymer resists with various molecular weights ranging from 60 k to 500 k are synthesized and the molecular weight dependence on exposure characteristics is examined by fabricating line-and-space patterns. The molecular weight dependence of sensitivity for amyl acetate developer is small in the molecular weight range in this study. In a low molecular weight resist, the cross-section profile of the resist pattern becomes rounder and then the disconnections are observed in the 20-nm line-and-space pattern. Although the pattern width change by changing the exposure dose for each resist is quite similar, the exposure dose margin of pattern formation becomes wider with the higher molecular weight. The line width roughness is smaller in a high molecular weight resist than in a low molecular weight resist. The shift amount of the pattern width from the design value for various line-and-space patterns and the dry etching resistance to CF4 plasma are also presented.