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2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)最新文献

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Compact Electro-Thermal Models for Integrated Systems 集成系统的紧凑电热模型
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626478
L. Codecasa, V. d’Alessandro
{"title":"Compact Electro-Thermal Models for Integrated Systems","authors":"L. Codecasa, V. d’Alessandro","doi":"10.1109/THERMINIC52472.2021.9626478","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626478","url":null,"abstract":"A novel approach is here proposed for the extraction of compact electro-thermal models of interconnects, in the static case, from their 3D discretized nonlinear electro-thermal models. It is based on Nonlinear Model Order Reduction and exploits Taylor’s series expansion of the discretized equations. Such extraction procedure of compact electro-thermal models is very efficient since it solely requires the alternate solutions of linear electric and linear thermal 3D discretized problems. Compact electro-thermal models with tiny numbers of degrees of freedom are able to be very accurate, as verified on a simple interconnection example.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129905841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single Phase Passive Hydrocarbon Immersion Cooling of High-power ICs 大功率集成电路单相被动烃类浸没冷却
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626533
W. Luiten
{"title":"Single Phase Passive Hydrocarbon Immersion Cooling of High-power ICs","authors":"W. Luiten","doi":"10.1109/THERMINIC52472.2021.9626533","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626533","url":null,"abstract":"Immersion cooling of data-center boards in dielectric fluid is replacing forced air cooling in view of increased power dissipations and growing environmental concerns. The choice of the dielectric fluid presents as a conflict between environmental and heat transfer properties. Hydrocarbon fluids have good environmental properties, but high viscosity, which is unfavorable for flow. This paper investigates passive single phase hydrocarbon immersion cooling as a substitute for forced air cooling on boards with high-power ICs. An analytical flat plate model is used for first estimations followed by CFD simulations on a state-of-the-art 500 W high-power IC, board and heatsink assembly in a 2U (90 mm) immersion cassette. A virtual response surface Design Of Experiments is used to optimize the fin configuration of the heatsink for 300 – 700 W IC dissipations in a 1U (45 mm) immersion cassette. In addition, the effect of position and the effect of multiple boards is investigated for the optimal heatsink configuration. Single phase passive hydrocarbon immersion cooling is shown to have better cooling performance on the existing design, and the optimized fin geometry demonstrates close to a factor 3 better volumetric cooling performance compared to 3 m/s forced air cooling.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127492882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Measuring the RthJC of Power Semiconductor Components Using Short Pulses 利用短脉冲测量功率半导体元件的RthJC
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626498
Sujay Singh, J. Proulx, A. Vass-Várnai
{"title":"Measuring the RthJC of Power Semiconductor Components Using Short Pulses","authors":"Sujay Singh, J. Proulx, A. Vass-Várnai","doi":"10.1109/THERMINIC52472.2021.9626498","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626498","url":null,"abstract":"This article explores the feasibility and acceptability of reducing the test time, to a fraction of the time required to reach the steady-state condition, to obtain the junction-to-case thermal resistance of power semiconductors. Data taken on three package types (TO-247, TO-252, and TO-263) is used in studying the effect of the heating/cooling time on the estimated thermal resistance. The results are in agreement with the FEA simulation, wherein, no change in isothermal surfaces in the package was observed after a few hundred milliseconds. Based on the observations, the deviation from the test conditions referred to in the JEDEC standard does not appear to affect the measurement results. This study demonstrates that the short pulse RthJC measurements could speed up component characterization without altering the measurement uncertainty thus enabling component manufacturers to characterize components in the assembly line.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116884105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of a Crack on Heat Flux in a Solder Joint between an Electronic Component Pin and a Printed Circuit Board 裂纹对电子元件引脚与印刷电路板之间焊点热流的影响
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626521
A. Kozlov
{"title":"Impact of a Crack on Heat Flux in a Solder Joint between an Electronic Component Pin and a Printed Circuit Board","authors":"A. Kozlov","doi":"10.1109/THERMINIC52472.2021.9626521","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626521","url":null,"abstract":"The paper discusses the thermal processes in a cracked solder joint between a component pin and a printed circuit board. For modeling temperature distribution in the solder joint, the 2D analytical model is used. The structure of the solder joint is divided into eight rectangular regions one of which is the crack. For all regions, the stationary heat conduction equation and the corresponding boundary conditions are established. The solution of the heat equation for each region is carried out by the analytical method. Using these solutions, the temperature distribution in the solder joint with the crack is determined. Based on the analytical solution for the temperature distribution the expressions for the heat flux through the soldered joint with the crack and for the thermal resistance of this joint are obtained. This approach is used to determine the dependencies of the heat flux and the thermal resistance on the crack length for the following location of the crack in the solder joint: in the middle of the solder zone; under the electrical component; alongside the pad of the printed circuit board.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114495371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal effect on performance of N-MOSFET transistor under pulsed RF tests 脉冲射频测试中N-MOSFET晶体管性能的热效应
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626537
M. A. Belaïd, A. Almusallam
{"title":"Thermal effect on performance of N-MOSFET transistor under pulsed RF tests","authors":"M. A. Belaïd, A. Almusallam","doi":"10.1109/THERMINIC52472.2021.9626537","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626537","url":null,"abstract":"This is a study of thermal effects on performance of N-channel power RF LDMOS devices, under reliability bench of pulsed RF life test in a radar application from 10° C to 150° C. The behaviour of semiconductor is delicate to temperature variation, especially power RF devices, that can partially or total change the performances of physical and electrical device. The temperature evolution during the operations causes a significant drift in device reliability and a considerable influence on reliability, which leads to failure. The main parameters (threshold voltage Vth, on-state resistance RDS-on, capacity Miller CRSS, Gain, Drain efficiency,) relevant to the temperature effects of the electrical performance of the device is reported and proven by the basic physical behaviour. The analysis of the experimental results are presented. Rarely, the physical simulations 3D ATLAS–SILVACO, are used to prove the mechanisms responsible of thermal impacts on power RF LDMOS performance.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115172904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Indirect In-Situ Junction Temperature Measurement for Condition Monitoring of GaN HEMT Devices during Application Related Reliability Testing 间接原位结温测量用于GaN HEMT器件在应用相关可靠性测试中的状态监测
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626523
MSc Sybille Ofner, M. Glavanovics, Annette Mütze
{"title":"Indirect In-Situ Junction Temperature Measurement for Condition Monitoring of GaN HEMT Devices during Application Related Reliability Testing","authors":"MSc Sybille Ofner, M. Glavanovics, Annette Mütze","doi":"10.1109/THERMINIC52472.2021.9626523","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626523","url":null,"abstract":"This paper presents an indirect method to estimate the junction temperature Tj of a GaN HEMT device during reliability testing. The method is based on a thermal resistance network and a thermal sensor. The main advantage of the proposed method is that the thermal sensor is not directly attached to the device, which allows the reliability test to run without disturbance or interruption. Furthermore the accuracy of this method is demonstrated by comparing the estimated values and measurements of the junction temperature Tj.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123736503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Towards the Extension of TRIC for Thermo-Mechanical Analysis 热-力学分析中TRIC的推广
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626532
L. Codecasa, A. Di Costanzo, V. d’Alessandro, R. Duca, D. Gualandris, A. Morelli, F. De Viti, C. Villa
{"title":"Towards the Extension of TRIC for Thermo-Mechanical Analysis","authors":"L. Codecasa, A. Di Costanzo, V. d’Alessandro, R. Duca, D. Gualandris, A. Morelli, F. De Viti, C. Villa","doi":"10.1109/THERMINIC52472.2021.9626532","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626532","url":null,"abstract":"In this paper, an extension of the existing Thermal Resistance and Impedance Calculator (TRIC) tool is proposed, which allows an efficient, yet accurate, computation of thermomechanical stress under stationary conditions in any specimen of a family of electronic packages. Each thermo-mechanical model is automatically generated and quickly solved by using a multigrid iteration solver and an ad hoc projection-based approach. An exposed quad-flat package is investigated as a case-study.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130816781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
PV fault detection through IR thermography: using EMPHASIS under uneven environmental conditions 基于红外热像仪的光伏故障检测:在不均匀环境条件下使用EMPHASIS
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626516
C. Scognamillo, A. P. Catalano, P. Guerriero, S. Daliento, L. Codecasa, V. d’Alessandro
{"title":"PV fault detection through IR thermography: using EMPHASIS under uneven environmental conditions","authors":"C. Scognamillo, A. P. Catalano, P. Guerriero, S. Daliento, L. Codecasa, V. d’Alessandro","doi":"10.1109/THERMINIC52472.2021.9626516","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626516","url":null,"abstract":"In this paper, the application of an Efficient Method for PHotovoltaic Arrays Study through Infrared Scanning (EMPHASIS) to a realistic scenario is introduced and discussed. EMPHASIS enables diagnosis and power assessment of any PV panel and allows detecting malfunctioning events without the need for interrupting the PV plant energy production. The input of the method consists in IR thermal maps, while its output is the cell-level distribution of generated/dissipated power. In order to test EMPHASIS in practical circumstances, the maps to be processed are numerically simulated under uneven wind conditions leading to a nonuniform temperature distribution over the panel. It is found that EMPHASIS is suited to provide a fairly good accuracy also in this complex case.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116510755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Parametric Simulative Study for Si and SiC Semiconductor Devices Under Various Accelerated Testing Conditions Using Rate- and Temperature Dependent Inelastic Material Data 基于速率和温度相关非弹性材料数据的硅和碳化硅半导体器件在各种加速测试条件下的参数化模拟研究
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626522
F. Forndran, J. Heilmann, M. Metzler, M. Leicht, B. Wunderle
{"title":"A Parametric Simulative Study for Si and SiC Semiconductor Devices Under Various Accelerated Testing Conditions Using Rate- and Temperature Dependent Inelastic Material Data","authors":"F. Forndran, J. Heilmann, M. Metzler, M. Leicht, B. Wunderle","doi":"10.1109/THERMINIC52472.2021.9626522","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626522","url":null,"abstract":"The usage of wide-bandgap semiconductor material such as silicon carbide and gallium nitride for power modules in electric vehicle applications is accompanied by higher power densities and higher operating temperatures compared to standard power modules employing silicon-based technology. This demands for new packaging materials like sintered silver which is able to cope with the higher thermo-mechanical stress. Within this study, comparative finite element simulations for silicon and silicon carbide as die material are presented. In addition, the material data used is gained from tensile tests and the viscoplastic behavior of sintered silver is modeled with the Anand model.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"379 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116582869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of Auto-calibration Hysteresis 自校准滞后的影响
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626480
V. H. Wong, J. Parry, G. Farkas
{"title":"Effects of Auto-calibration Hysteresis","authors":"V. H. Wong, J. Parry, G. Farkas","doi":"10.1109/THERMINIC52472.2021.9626480","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626480","url":null,"abstract":"Structure Function based calibration for numerical models usually involve the heating up the device until it reaches a steady state temperature. Experiments are typically carried out in an opposite way, with the cooling down of the device from an initial powered on state. It is generally assumed that both methods will yield the same results. However, non-linear thermal effects such as the temperature dependent thermal conductivities of semiconductor materials can affect the structure function curves.This study quantified the differences when using heat-up and cool-down simulations, and the effects on the resulting calibrated models. These models were then subjected to a time varying driving cycle emulating a typical field application for the devices considered in the study.It was found that there were only minor differences in the thermal performance of the devices. Using either heat-up or cool-down simulations gave negligible differences in the thermal response and behaviour of the test devices.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115795416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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