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2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)最新文献

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Applying Delphi-like CTM Partitioning on Electrothermally Connected FANTASTIC BCI-ROMs 在电热连接梦幻bci - rom上应用类delphi CTM划分
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626526
Mahmood Alkhenaizi, B. Blackmore, M. Donnelly
{"title":"Applying Delphi-like CTM Partitioning on Electrothermally Connected FANTASTIC BCI-ROMs","authors":"Mahmood Alkhenaizi, B. Blackmore, M. Donnelly","doi":"10.1109/THERMINIC52472.2021.9626526","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626526","url":null,"abstract":"Coupled analysis is becoming an ever-increasing staple in electronics design, especially the coupling of the electrical and thermal domains. The use of FANTASTIC BCI-ROM to enable accurate and reliable 3D thermal effects to be captured in 1D electrothermal circuits has been demonstrated. The assumption when connecting BCI-ROM components is of uniform 1D heat distribution within the connection, which is rarely the case.The interface between a package and the board it is positioned on, can be highly non-isothermal. To capture this non-uniformity, this paper explores the use of a Delphi-like CTM surface partitioning scheme on connected BCI-ROMs and demonstrates a reduction in the error that is introduced by non-uniform boundaries when comparing the 1D electrothermal circuit to the 3D thermal simulation.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121654919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Clarification of Error Factors in Thermal Impedance Measurements Using SiC-MOSFET Body Diodes Compared to SWITCH-MOS 澄清使用SiC-MOSFET体二极管与开关- mos进行热阻抗测量时的误差因素
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626400
F. Kato, Shinji Sato, Shinsuke Harda, H. Hozoji, A. Sakai, Kinuyo Wantanabe, H. Yamaguchi, Hiroshi Sato
{"title":"Clarification of Error Factors in Thermal Impedance Measurements Using SiC-MOSFET Body Diodes Compared to SWITCH-MOS","authors":"F. Kato, Shinji Sato, Shinsuke Harda, H. Hozoji, A. Sakai, Kinuyo Wantanabe, H. Yamaguchi, Hiroshi Sato","doi":"10.1109/THERMINIC52472.2021.9626400","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626400","url":null,"abstract":"In this paper, we measured and compared the thermal impedance (Zth) of silicon carbide (SiC) power module assembled with a Schottky barrier diode wall-integrated trench MOSFET (SWITCH-MOS; hereafter SMOS) and a conventional trench-gate MOSFET (UMOS). The temperature was detected by the Schottky barrier diode (SBD) for the SMOS and the pin diode for the UMOS. Since the knee voltage in UMOS varies with the gate voltage, a deep negative gate bias was needed to avoid this effect. A gate bias of –18 V is applied to the UMOS. However, no gate bias was required for the SMOS. The measured Zth was in good agreement between the UMOS and SMOS modules. Therefore, we can conclude that the SMOS can measure transient temperature at the same location as UMOS. In addition, the SBD built into the SMOS allows for easier and more accurate measurement of SiC-MOSFET junction temperature.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"21 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122124709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization-based Network Identification for Thermal Transient Measurements on LEDs 基于优化的led热瞬态测量网络辨识
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626491
Nils J. Ziegeler, P. Nolte, S. Schweizer
{"title":"Optimization-based Network Identification for Thermal Transient Measurements on LEDs","authors":"Nils J. Ziegeler, P. Nolte, S. Schweizer","doi":"10.1109/THERMINIC52472.2021.9626491","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626491","url":null,"abstract":"In transient thermal testing, network identification by deconvolution is a frequently used technique to analyze the thermal properties of a device. To obtain reliable results, the method requires measurement data with a high signal-to-noise ratio. In particular, the derivation and deconvolution steps yield inaccurate results when confronted with noisy data. In this work, an alternative evaluation procedure called optimization-based network identification is applied to thermal transient data. The method uses a multidimensional optimization to generate a piecewise uniform structure function, which has a thermal impedance that matches the measurement data well. To judge the accuracy of the optimization-based network identification and to compare it to other methods objectively, accuracy measures are developed. Several variants of network identification a re tested using a reference structure in dependence of the signal-to-noise ratio. Finally, the optimization-based network identification is applied to transient thermal measurements conducted on LEDs. In addition, a transient dual interface test is evaluated comparing the classical approach to the optimization-based network identification.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121406845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal Analysis of SiC Power Semiconductor Packages using the Structure Function 基于结构函数的SiC功率半导体封装热分析
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626395
S. Race, Ivana Kovacevic-Badstuebner, Michel Nagel, T. Ziemann, S. Tiwari, E. Mengotti, E. Bianda, J. Jormanainen, U. Grossner
{"title":"Thermal Analysis of SiC Power Semiconductor Packages using the Structure Function","authors":"S. Race, Ivana Kovacevic-Badstuebner, Michel Nagel, T. Ziemann, S. Tiwari, E. Mengotti, E. Bianda, J. Jormanainen, U. Grossner","doi":"10.1109/THERMINIC52472.2021.9626395","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626395","url":null,"abstract":"This paper presents a comprehensive analysis on the information contained within the structure functions of SiC power MOSFET packages, focusing on the regions of die and die attach layer. It is shown that the structure function is affected by: 1) the square-root-t approximation of the missing part of the measured thermal impedance, 2) the temperature-dependent package material properties, 3) the thermal coupling between parallel dies in a multi-chip power module (MCPM), and 4) the nonuniform degradation of die attachment layers in the MCPM estimated by a common temperature-sensitive electrical parameter. All effects are quantitatively determined using calibrated electrothermal COMSOL models of a discrete commercial SiC power MOSFET package and a multichip half-bridge SiC power MOSFET power module designed and fabricated in-house.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125918275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermo-fluidic characterization of automotive LiDAR module under realistic enforced air-cooling conditions in a closed wind tunnel 封闭风洞中实际强制风冷条件下汽车激光雷达模块的热流体特性
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626477
M. Tavakolibasti, R. Schacht, B. Wunderle, T. Nowak
{"title":"Thermo-fluidic characterization of automotive LiDAR module under realistic enforced air-cooling conditions in a closed wind tunnel","authors":"M. Tavakolibasti, R. Schacht, B. Wunderle, T. Nowak","doi":"10.1109/THERMINIC52472.2021.9626477","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626477","url":null,"abstract":"In this publication, the authors have shown the steps for design of cooling structures to be used at the board level in realization of a reduced complexity module of an automotive LiDAR system. The results from the simulations were validated in the same boundary conditions using experiments and are used for the build of a digital twin, which represents the physical entity in detail.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121830314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs 单片集成GaN半桥集成电路的嵌入式微通道散热
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626476
R. van Erp, N. Perera, L. Nela, E. Matioli
{"title":"Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs","authors":"R. van Erp, N. Perera, L. Nela, E. Matioli","doi":"10.1109/THERMINIC52472.2021.9626476","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626476","url":null,"abstract":"Efficient and compact power conversion is a key requirement to achieve sustainable electrification of our society. GaN-based power devices offer major benefits compared to their silicon counterparts in terms of efficiency and integration but suffer from severe thermal challenges. Self-heating negatively impacts device performance and reliability, and the lateral integration of power devices and logic on a single integrated circuit cannot be fully exploited without novel cooling methods. In this work, we show a method to integrate microchannel cooling inside the silicon substrate of an off-the-shelf GaN-on-Si power IC and achieve a 25x-reduction on thermal resistance compared to forced air cooling. We investigate measurement techniques to measure the device temperature when no direct physical or optical connection can be made to the chip. A side-by-side comparison in electrical and thermal performance between conventional (forced) air-cooling shows that the integration of liquid cooling reduces the negative effects of self-heating on electrical performance while significantly improving its maximum current capability. The results show a first step toward making high-performance power converters with state-of-the-art thermal performance.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"285 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116511007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparative multiphysics simulation of VO2 based lateral devices 基于VO2的横向器件的比较多物理场模拟
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626517
S. A. Al-abassi, M. Darwish, L. Pohl, J. Mizsei, Peter G. Neumann
{"title":"Comparative multiphysics simulation of VO2 based lateral devices","authors":"S. A. Al-abassi, M. Darwish, L. Pohl, J. Mizsei, Peter G. Neumann","doi":"10.1109/THERMINIC52472.2021.9626517","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626517","url":null,"abstract":"Due to reaching the end of Moore’s era and minimising CMOS technology becomes difficult. Finding different materials to keep electronic devices evolving is a matter of scientists. A thermal electronic logic circuit (TELC) is one of the most prominent alternatives that has been proposed recently. Vanadium dioxide (VO2) is an essential material that has been utilised in TELC due to its thermal and electrical properties. VO2 transits its electrical property from the semiconductor phase into the metal phase at around 67°C. In this paper, two numerical methods were used to determine the electrical and thermal characteristics of VO2, and measured data compared the results. The phase-change material behaviour was modelled by two different softwares using different simulation methods, finite volume method FVM and finite element method FEM. The sample preparation and the thermal and electrical measurements were carried out in our cleanroom.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"1997 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132291065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Liquid cooling solutions for Automotive HPC: Experimental Thermo-Fluidic Characterisation 汽车高性能计算的液体冷却解决方案:实验热流体特性
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626475
T. Grün, D. May, Hubert Straub, Gromala Przemyslaw Jakub, B. Wunderle
{"title":"Liquid cooling solutions for Automotive HPC: Experimental Thermo-Fluidic Characterisation","authors":"T. Grün, D. May, Hubert Straub, Gromala Przemyslaw Jakub, B. Wunderle","doi":"10.1109/THERMINIC52472.2021.9626475","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626475","url":null,"abstract":"Autonomous driving calls for on-board HPC modules requiring enhanced and reliable cooling solutions under harsh environmental conditions. This paper proposes a suitable concept to meet these requirements, including thermal management all along the heat path from silicon to system level, where the heat is rejected into the automotive fluid cooling loop by a pin-fin cooler. We show results of the thermal heat path design and characterization, introduce a performance metric, evaluate the cooler performance limits and potential solutions within a system approach.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134207318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evaluation of Failure Mechanisms in Low Thermal Resistance Interface Materials for Reliable Electronics Applications 用于可靠电子应用的低热阻界面材料失效机制的评估
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626495
K. Wilken, Matthias Grossmann, Cristian De Santis
{"title":"Evaluation of Failure Mechanisms in Low Thermal Resistance Interface Materials for Reliable Electronics Applications","authors":"K. Wilken, Matthias Grossmann, Cristian De Santis","doi":"10.1109/THERMINIC52472.2021.9626495","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626495","url":null,"abstract":"Thermal interface materials are critical for heat dissipation and thus reliable operation of many electronic parts. Considering future challenges such as autonomous driving, reliability is a key factor for safety and performance. This work studies various failure mechanisms which can occur in polymeric thermal interface materials. Each failure mechanism is linked to an experimental setup/method that may help to gain indications for material screening purposes. Various product classes are screened and put into perspective and benefits of each one of these product classes are discussed.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122904023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Application of Vanadium Dioxide for Thermal Sensing 二氧化钒在热感测中的应用
2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI: 10.1109/THERMINIC52472.2021.9626518
M. Darwish, S. A. Al-abassi, Peter G. Neumann, J. Mizsei, L. Pohl
{"title":"Application of Vanadium Dioxide for Thermal Sensing","authors":"M. Darwish, S. A. Al-abassi, Peter G. Neumann, J. Mizsei, L. Pohl","doi":"10.1109/THERMINIC52472.2021.9626518","DOIUrl":"https://doi.org/10.1109/THERMINIC52472.2021.9626518","url":null,"abstract":"Thermal sensors are widely used in different areas such as, automotive, defense, healthcare, and fire protection. Heat management is a hot topic nowadays, especially in electronics and power electronic packages, due to the miniaturization of semiconductor devices dimensions. New materials and concepts are studied to develop thermal sensors with more excellent reliability and sensitivity. Vanadium dioxide is a strongly correlated electron material with interesting thermal and optical properties due to its transition from a low-conducting phase to a high-conducting phase called metal-to-insulator transition. This study investigates two different models to use vanadium dioxide as a sensing element by presenting simulations performed on SUNRED simulator.","PeriodicalId":302492,"journal":{"name":"2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123987028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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