单片集成GaN半桥集成电路的嵌入式微通道散热

R. van Erp, N. Perera, L. Nela, E. Matioli
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引用次数: 1

摘要

高效、紧凑的电力转换是实现社会可持续电气化的关键要求。基于氮化镓的功率器件在效率和集成方面与硅器件相比具有主要优势,但存在严重的热挑战。自热会对器件性能和可靠性产生负面影响,如果没有新颖的冷却方法,就无法充分利用单个集成电路上的功率器件和逻辑的横向集成。在这项工作中,我们展示了一种将微通道冷却集成到现成的GaN-on-Si功率IC的硅衬底内的方法,与强制空气冷却相比,热阻降低了25倍。我们研究了在没有直接物理或光学连接的情况下测量器件温度的测量技术。传统(强制)风冷在电气和热学性能方面的对比表明,液冷的集成减少了自加热对电气性能的负面影响,同时显着提高了其最大电流能力。研究结果表明,朝着制造具有最先进热性能的高性能电源转换器迈出了第一步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs
Efficient and compact power conversion is a key requirement to achieve sustainable electrification of our society. GaN-based power devices offer major benefits compared to their silicon counterparts in terms of efficiency and integration but suffer from severe thermal challenges. Self-heating negatively impacts device performance and reliability, and the lateral integration of power devices and logic on a single integrated circuit cannot be fully exploited without novel cooling methods. In this work, we show a method to integrate microchannel cooling inside the silicon substrate of an off-the-shelf GaN-on-Si power IC and achieve a 25x-reduction on thermal resistance compared to forced air cooling. We investigate measurement techniques to measure the device temperature when no direct physical or optical connection can be made to the chip. A side-by-side comparison in electrical and thermal performance between conventional (forced) air-cooling shows that the integration of liquid cooling reduces the negative effects of self-heating on electrical performance while significantly improving its maximum current capability. The results show a first step toward making high-performance power converters with state-of-the-art thermal performance.
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