Thermal effect on performance of N-MOSFET transistor under pulsed RF tests

This is a study of thermal effects on performance of N-channel power RF LDMOS devices, under reliability bench of pulsed RF life test in a radar application from 10° C to 150° C. The behaviour of semiconductor is delicate to temperature variation, especially power RF devices, that can partially or total change the performances of physical and electrical device. The temperature evolution during the operations causes a significant drift in device reliability and a considerable influence on reliability, which leads to failure. The main parameters (threshold voltage Vth, on-state resistance RDS-on, capacity Miller CRSS, Gain, Drain efficiency,) relevant to the temperature effects of the electrical performance of the device is reported and proven by the basic physical behaviour. The analysis of the experimental results are presented. Rarely, the physical simulations 3D ATLAS–SILVACO, are used to prove the mechanisms responsible of thermal impacts on power RF LDMOS performance.