A Parametric Simulative Study for Si and SiC Semiconductor Devices Under Various Accelerated Testing Conditions Using Rate- and Temperature Dependent Inelastic Material Data

Abstract

The usage of wide-bandgap semiconductor material such as silicon carbide and gallium nitride for power modules in electric vehicle applications is accompanied by higher power densities and higher operating temperatures compared to standard power modules employing silicon-based technology. This demands for new packaging materials like sintered silver which is able to cope with the higher thermo-mechanical stress. Within this study, comparative finite element simulations for silicon and silicon carbide as die material are presented. In addition, the material data used is gained from tensile tests and the viscoplastic behavior of sintered silver is modeled with the Anand model.