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2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)最新文献

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Very low phase-noise fully-integrated coupled VCOs 极低相位噪声的全集成耦合压控振荡器
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/MWSYM.2002.1011686
H. Jacobsson, Bertil Hansson, H. Berg, S. Gevorgian
{"title":"Very low phase-noise fully-integrated coupled VCOs","authors":"H. Jacobsson, Bertil Hansson, H. Berg, S. Gevorgian","doi":"10.1109/MWSYM.2002.1011686","DOIUrl":"https://doi.org/10.1109/MWSYM.2002.1011686","url":null,"abstract":"With the aim of achieving very low phase noise, two area and power consumption efficient methods of coupling two or more identical VCOs are presented. To verify the principles, a set of fully integrated, coupled VCOs of the cross-coupled differential pair type, was manufactured in a commercial SiGe HBT technology. The measured phase noise at 100 kHz offset frequency was -106 dBc/Hz at 6 GHz using two coupled VCOs and -103 dBc/Hz at 12 GHz using four coupled VCOs. A phase noise reduction of 1-6 dB was achieved relative to a single VCO of the same topology. In one of the two methods, output signals are additionally obtained in quadrature.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129609140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology 高性能单电源功率放大器，用于GSM和DCS应用，采用真正的增强模式场效应管技术
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/RFIC.2002.1012088
E. Glass, M. Shields, A. Reyes
{"title":"High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology","authors":"E. Glass, M. Shields, A. Reyes","doi":"10.1109/RFIC.2002.1012088","DOIUrl":"https://doi.org/10.1109/RFIC.2002.1012088","url":null,"abstract":"Two high performance single supply power amplifier IC products have been developed for GSM and DCS applications using true enhancement mode FET technology. At VD=3.2V, under CW conditions, the GSM IC supplies +35.5 dBm output power at 58% PAE and the DCS IC supplies +33.5 dBm at 46% PAE. These ICs have low leakage currents similar to HBT and LDMOS and do not require the use of a drain switch. In addition, due to a high threshold voltage (Vth=+0.6V), they exhibit excellent RF isolation at Vref=0.1V and Pin=+5 dBm and do not require on-chip attenuators.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"156 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134323871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Hot carrier and soft breakdown effects on VCO perfomance 热载流子和软击穿对压控振荡器性能的影响
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/TMTT.2002.804632
E. Xiao, J. Yuan
{"title":"Hot carrier and soft breakdown effects on VCO perfomance","authors":"E. Xiao, J. Yuan","doi":"10.1109/TMTT.2002.804632","DOIUrl":"https://doi.org/10.1109/TMTT.2002.804632","url":null,"abstract":"This paper systematically investigates the hot carrier and soft-breakdown induced performance degradation in a CMOS voltage-controlled oscillator used in phase locked loop frequency synthesizers. After deriving the closed-form equations to predict phase noise and VCO gain, we relate VCO RF performance such as phase noise, tuning range and gain of VCO subject to electrical stress. The circuit degradations predicted by analytical model equations are verified by SpectraRF simulation using parameters extracted from the experimental data of 0.16 /spl mu/m CMOS technology.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123719253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Design techniques for improved microwave performance of small outline packages 改进小外形封装微波性能的设计技术
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/MWSYM.2002.1011616
D. Jessie, L. Larson
{"title":"Design techniques for improved microwave performance of small outline packages","authors":"D. Jessie, L. Larson","doi":"10.1109/MWSYM.2002.1011616","DOIUrl":"https://doi.org/10.1109/MWSYM.2002.1011616","url":null,"abstract":"General techniques to improve the microwave performance of plastic leaded packages have been developed. These techniques result in an Improvement of the bandwidth and reduction of losses in the structure. The techniques were applied to an SSOP8 configuration, and the useful frequency range was extended from 6 GHz to well above 10 GHz.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121833351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design and analysis of a multi-layer transformer balun for silicon RF integrated circuits 用于硅射频集成电路的多层变压器平衡器的设计与分析
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/MWSYM.2002.1011692
H. Yang, L. Zhang, J. A. Castaneda
{"title":"Design and analysis of a multi-layer transformer balun for silicon RF integrated circuits","authors":"H. Yang, L. Zhang, J. A. Castaneda","doi":"10.1109/MWSYM.2002.1011692","DOIUrl":"https://doi.org/10.1109/MWSYM.2002.1011692","url":null,"abstract":"In this paper, we present the design and analysis of an on-chip transformer balun for silicon RFICs. Both the primary and secondary spread over four metal layers along a common symmetric axis to reduce the overall area, maintaining reasonable quality factor. A five port transformer balun circuit model is developed to facilitate the device simulation. A 4:11 transformer balun is fabricated and tested. It is ideal for LNAs to enhance the gain with optimum noise figure.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125282627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
High performance circuits in 0.18 /spl mu/m SiGe BiCMOS process for wireless applications 高性能电路采用0.18 /spl mu/m SiGe BiCMOS工艺，用于无线应用
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/RFIC.2002.1012060
P. Ye, B. Agarwal, M. Reddy, L. Li, J. Cheng, P. Mudge, E. McCarthy, S. Lloyd
{"title":"High performance circuits in 0.18 /spl mu/m SiGe BiCMOS process for wireless applications","authors":"P. Ye, B. Agarwal, M. Reddy, L. Li, J. Cheng, P. Mudge, E. McCarthy, S. Lloyd","doi":"10.1109/RFIC.2002.1012060","DOIUrl":"https://doi.org/10.1109/RFIC.2002.1012060","url":null,"abstract":"Silicon germanium bipolar CMOS (SiGe BiCMOS) process technology is gaining increasing popularity for RF circuits in wireless applications due to high performance, low cost, high yield and higher levels of integration with mixed signal and digital CMOS circuits. Four test circuits were designed and fabricated in Conexant's 0.18 /spl mu/m SiGe BiCMOS process to evaluate the performance benefits provided by this state of the art process technology. The RF performance achieved in this process clearly makes this a process of choice for future RFIC products.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133110344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
ESD protection of RF circuits in standard CMOS process 标准CMOS工艺中射频电路的ESD保护
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/MWSYM.2002.1011551
K. Higashi, A. Adan, M. Fukumi, N. Tanba, T. Yoshimasu, M. Hayashi
{"title":"ESD protection of RF circuits in standard CMOS process","authors":"K. Higashi, A. Adan, M. Fukumi, N. Tanba, T. Yoshimasu, M. Hayashi","doi":"10.1109/MWSYM.2002.1011551","DOIUrl":"https://doi.org/10.1109/MWSYM.2002.1011551","url":null,"abstract":"The tradeoffs in the ESD protection device for RFCMOS circuits are described, and the characteristics of an SCR-based ESD structure are presented. The parasitic capacitance of the ESD structure is reduced to /spl sim/150 fF. 3 kV HBM and 750 V CDM are achieved in a LNA working at 2.5 GHz with NF<4dB, applicable for Bluetooth wireless transceiver.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126558764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Wide-tuning-range dual-VCOs for cable modem receivers 用于电缆调制解调器接收器的宽调谐范围双vco
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/MWSYM.2002.1011687
K. Stadius, K. Halonen
{"title":"Wide-tuning-range dual-VCOs for cable modem receivers","authors":"K. Stadius, K. Halonen","doi":"10.1109/MWSYM.2002.1011687","DOIUrl":"https://doi.org/10.1109/MWSYM.2002.1011687","url":null,"abstract":"A double-conversion receiver for cable modem applications requires a wide-tuning-range VCO with low phase noise characteristics for the first LO generation. Achieving simultaneously low phase noise and large tuning range from a monolithic VCO is an exceptionally challenging task. The design aspects of wideband monolithic LC-VCO are tackled in this paper with the boundaries set by a 0.9-/spl mu/m SiGe HBT technology. Two dual-VCO implementations are presented and a method for buffering the VCO signal without loading the LC-resonator is proposed. Both simulation and experimental results are given.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125627980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
RF power characteristics of SiGe heterojunction bipolar transistor with high breakdown voltage structures 高击穿电压结构SiGe异质结双极晶体管的射频功率特性
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/MWSYM.2002.1011615
T. Matsuno, K. Nishii, S. Sonetaka, Y. Toyoda, N. Iwamoto
{"title":"RF power characteristics of SiGe heterojunction bipolar transistor with high breakdown voltage structures","authors":"T. Matsuno, K. Nishii, S. Sonetaka, Y. Toyoda, N. Iwamoto","doi":"10.1109/MWSYM.2002.1011615","DOIUrl":"https://doi.org/10.1109/MWSYM.2002.1011615","url":null,"abstract":"The collector profile dependences of RF power characteristics of SiGe HBT have been studied. A selectively ion implanted collector (SIC) structure with a thick and lightly doped collector layer showed good RF power characteristics including the adjacent-channel-power-ratio characteristics for middle class power around output power of 16 dBm while maintaining BV/sub CEO/ over 5 V. The maximum BVCEO of 9 V was obtained using the same process only by removing the SIC structure. Both structures are available to fabrication of multi-stage RF power amplifier on to one chip by single process.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131015297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An analog baseband chain for a UMTS zero-IF receiver in a 75 GHz SiGe BiCMOS technology 用于75 GHz SiGe BiCMOS技术的UMTS零中频接收机的模拟基带链
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/MWSYM.2002.1011546
W. Schelmbauer, H. Pretl, L. Maurer, B. Adler, R. Weigel, R. Hagelauer, J. Fenk
{"title":"An analog baseband chain for a UMTS zero-IF receiver in a 75 GHz SiGe BiCMOS technology","authors":"W. Schelmbauer, H. Pretl, L. Maurer, B. Adler, R. Weigel, R. Hagelauer, J. Fenk","doi":"10.1109/MWSYM.2002.1011546","DOIUrl":"https://doi.org/10.1109/MWSYM.2002.1011546","url":null,"abstract":"A zero-IF receiver for UMTS realized by using an advanced 0.35 /spl mu/m SiGe BiCMOS process with 75 GHz transit frequency is presented. The focal point is the analog baseband chain consisting of a low-noise buffer (LNB), a fully integrated channel selection filter, programmable gain amplifiers (PGA) and circuits to reduce the effects of DC-offsets. The whole chain is able to provide a voltage gain from -14 dB up to 50 dB in 1 dB steps and 43 dB adjacent channel selectivity. The total receiver current consumption for a supply voltage of 2.7 V is less than 45 mA, whereby the baseband chain consumes 15 mA.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127058010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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