高性能单电源功率放大器，用于GSM和DCS应用，采用真正的增强模式场效应管技术

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI:10.1109/RFIC.2002.1012088

E. Glass, M. Shields, A. Reyes

{"title":"高性能单电源功率放大器，用于GSM和DCS应用，采用真正的增强模式场效应管技术","authors":"E. Glass, M. Shields, A. Reyes","doi":"10.1109/RFIC.2002.1012088","DOIUrl":null,"url":null,"abstract":"Two high performance single supply power amplifier IC products have been developed for GSM and DCS applications using true enhancement mode FET technology. At VD=3.2V, under CW conditions, the GSM IC supplies +35.5 dBm output power at 58% PAE and the DCS IC supplies +33.5 dBm at 46% PAE. These ICs have low leakage currents similar to HBT and LDMOS and do not require the use of a drain switch. In addition, due to a high threshold voltage (Vth=+0.6V), they exhibit excellent RF isolation at Vref=0.1V and Pin=+5 dBm and do not require on-chip attenuators.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"156 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology\",\"authors\":\"E. Glass, M. Shields, A. Reyes\",\"doi\":\"10.1109/RFIC.2002.1012088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two high performance single supply power amplifier IC products have been developed for GSM and DCS applications using true enhancement mode FET technology. At VD=3.2V, under CW conditions, the GSM IC supplies +35.5 dBm output power at 58% PAE and the DCS IC supplies +33.5 dBm at 46% PAE. These ICs have low leakage currents similar to HBT and LDMOS and do not require the use of a drain switch. In addition, due to a high threshold voltage (Vth=+0.6V), they exhibit excellent RF isolation at Vref=0.1V and Pin=+5 dBm and do not require on-chip attenuators.\",\"PeriodicalId\":299621,\"journal\":{\"name\":\"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)\",\"volume\":\"156 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2002.1012088\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2002.1012088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

采用真正的增强模式场效应管技术，开发了两种用于GSM和DCS应用的高性能单电源功率放大器集成电路产品。在VD=3.2V时，连续波条件下，GSM IC在58% PAE下提供+35.5 dBm输出功率，DCS IC在46% PAE下提供+33.5 dBm输出功率。这些集成电路具有类似HBT和LDMOS的低泄漏电流，并且不需要使用漏极开关。此外，由于高阈值电压(Vth=+0.6V)，它们在Vref=0.1V和Pin=+5 dBm时表现出出色的RF隔离，并且不需要片上衰减器。

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High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology

Two high performance single supply power amplifier IC products have been developed for GSM and DCS applications using true enhancement mode FET technology. At VD=3.2V, under CW conditions, the GSM IC supplies +35.5 dBm output power at 58% PAE and the DCS IC supplies +33.5 dBm at 46% PAE. These ICs have low leakage currents similar to HBT and LDMOS and do not require the use of a drain switch. In addition, due to a high threshold voltage (Vth=+0.6V), they exhibit excellent RF isolation at Vref=0.1V and Pin=+5 dBm and do not require on-chip attenuators.

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来源期刊

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)

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