用于75 GHz SiGe BiCMOS技术的UMTS零中频接收机的模拟基带链

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI:10.1109/MWSYM.2002.1011546

W. Schelmbauer, H. Pretl, L. Maurer, B. Adler, R. Weigel, R. Hagelauer, J. Fenk

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引用次数: 9

摘要

提出了一种采用先进的0.35 /spl μ l /m SiGe BiCMOS工艺和75 GHz传输频率实现的UMTS零中频接收机。重点是由低噪声缓冲器(LNB)、完全集成的通道选择滤波器、可编程增益放大器(PGA)和减少直流偏置影响的电路组成的模拟基带链。整个链能够在1 dB步进和43 dB相邻通道选择性中提供从-14 dB到50 dB的电压增益。在电源电压为2.7 V时，接收器的总电流消耗小于45ma，其中基带链消耗15ma。

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An analog baseband chain for a UMTS zero-IF receiver in a 75 GHz SiGe BiCMOS technology

A zero-IF receiver for UMTS realized by using an advanced 0.35 /spl mu/m SiGe BiCMOS process with 75 GHz transit frequency is presented. The focal point is the analog baseband chain consisting of a low-noise buffer (LNB), a fully integrated channel selection filter, programmable gain amplifiers (PGA) and circuits to reduce the effects of DC-offsets. The whole chain is able to provide a voltage gain from -14 dB up to 50 dB in 1 dB steps and 43 dB adjacent channel selectivity. The total receiver current consumption for a supply voltage of 2.7 V is less than 45 mA, whereby the baseband chain consumes 15 mA.

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来源期刊

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)

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