高击穿电压结构SiGe异质结双极晶体管的射频功率特性

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI:10.1109/MWSYM.2002.1011615

T. Matsuno, K. Nishii, S. Sonetaka, Y. Toyoda, N. Iwamoto

{"title":"高击穿电压结构SiGe异质结双极晶体管的射频功率特性","authors":"T. Matsuno, K. Nishii, S. Sonetaka, Y. Toyoda, N. Iwamoto","doi":"10.1109/MWSYM.2002.1011615","DOIUrl":null,"url":null,"abstract":"The collector profile dependences of RF power characteristics of SiGe HBT have been studied. A selectively ion implanted collector (SIC) structure with a thick and lightly doped collector layer showed good RF power characteristics including the adjacent-channel-power-ratio characteristics for middle class power around output power of 16 dBm while maintaining BV/sub CEO/ over 5 V. The maximum BVCEO of 9 V was obtained using the same process only by removing the SIC structure. Both structures are available to fabrication of multi-stage RF power amplifier on to one chip by single process.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"RF power characteristics of SiGe heterojunction bipolar transistor with high breakdown voltage structures\",\"authors\":\"T. Matsuno, K. Nishii, S. Sonetaka, Y. Toyoda, N. Iwamoto\",\"doi\":\"10.1109/MWSYM.2002.1011615\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The collector profile dependences of RF power characteristics of SiGe HBT have been studied. A selectively ion implanted collector (SIC) structure with a thick and lightly doped collector layer showed good RF power characteristics including the adjacent-channel-power-ratio characteristics for middle class power around output power of 16 dBm while maintaining BV/sub CEO/ over 5 V. The maximum BVCEO of 9 V was obtained using the same process only by removing the SIC structure. Both structures are available to fabrication of multi-stage RF power amplifier on to one chip by single process.\",\"PeriodicalId\":299621,\"journal\":{\"name\":\"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2002.1011615\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2002.1011615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

研究了SiGe HBT射频功率特性与集电极外形的关系。具有厚且轻掺杂集电极层的选择性离子注入集电极(SIC)结构具有良好的射频功率特性，包括在输出功率为16 dBm左右时中等功率的邻接通道功率比特性，同时保持BV/sub CEO/大于5 V。采用相同的工艺，仅去除SIC结构即可获得9 V的最大BVCEO。这两种结构都适用于单工艺在单芯片上制造多级射频功率放大器。

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RF power characteristics of SiGe heterojunction bipolar transistor with high breakdown voltage structures

The collector profile dependences of RF power characteristics of SiGe HBT have been studied. A selectively ion implanted collector (SIC) structure with a thick and lightly doped collector layer showed good RF power characteristics including the adjacent-channel-power-ratio characteristics for middle class power around output power of 16 dBm while maintaining BV/sub CEO/ over 5 V. The maximum BVCEO of 9 V was obtained using the same process only by removing the SIC structure. Both structures are available to fabrication of multi-stage RF power amplifier on to one chip by single process.

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2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)

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