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2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)最新文献

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Schottky junction transistors for micropower RFICs 微功率射频集成电路用肖特基结晶体管
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/MWSYM.2002.1011674
J. Spann, Zhiyuan Wu, P. Jaconelli, Jinman Yang, T. Thornton
{"title":"Schottky junction transistors for micropower RFICs","authors":"J. Spann, Zhiyuan Wu, P. Jaconelli, Jinman Yang, T. Thornton","doi":"10.1109/MWSYM.2002.1011674","DOIUrl":"https://doi.org/10.1109/MWSYM.2002.1011674","url":null,"abstract":"Results are presented from measurements and numerical simulations of Schottky junction transistors, a new type of micropower device capable of operating at GHz frequencies in the sub-threshold regime. Detailed measurements of the DC characteristics of a 2 /spl mu/m gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length device will have a cut-off frequency of 126 MHz, which is again consistent with the numerical simulations. When projected to gate lengths of 0.1 /spl mu/m, cut-off frequencies in excess of 10 GHz are predicted for drain currents of less than 1 /spl mu/A//spl mu/m.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122773604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Spiral inductor performance in deep-submicron bulk-CMOS with copper interconnects 深亚微米铜互连体cmos螺旋电感性能研究
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/MWSYM.2002.1011617
W. Kuhn, A. Orsborn, M.C. Peterson, S.R. Kythakyapuzha, A. Hussein, Jun Zhang, Jianming Li, E. A. Shumaker, N. Nair
{"title":"Spiral inductor performance in deep-submicron bulk-CMOS with copper interconnects","authors":"W. Kuhn, A. Orsborn, M.C. Peterson, S.R. Kythakyapuzha, A. Hussein, Jun Zhang, Jianming Li, E. A. Shumaker, N. Nair","doi":"10.1109/MWSYM.2002.1011617","DOIUrl":"https://doi.org/10.1109/MWSYM.2002.1011617","url":null,"abstract":"This paper reviews design considerations for spiral inductors in bulk CMOS and reports investigations carried out in a commercial 0.18 /spl mu/m process using 6-layer copper metallization. Quality factors of approximately 8 are measured for 10 nH spirals operating between 1 and 2 GHz. Comparisons of Q and self-resonant frequency are provided for a variety of construction variables including with/without a patterned ground shield, metal-6 only versus stacking layers 3 thru 6, dense versus sparse vias, wide versus narrow traces, and with/without metal-fill.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115996493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Super compact RFIC inductors in 0.18 /spl mu/m CMOS with copper interconnects 超紧凑型RFIC电感，采用0.18 /spl μ m CMOS，铜互连
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/MWSYM.2002.1011680
H. Feng, G. Jelodin, Ke Gong, R. Zhan, Q. Wu, C. Chen, Albert Wang
{"title":"Super compact RFIC inductors in 0.18 /spl mu/m CMOS with copper interconnects","authors":"H. Feng, G. Jelodin, Ke Gong, R. Zhan, Q. Wu, C. Chen, Albert Wang","doi":"10.1109/MWSYM.2002.1011680","DOIUrl":"https://doi.org/10.1109/MWSYM.2002.1011680","url":null,"abstract":"Design of super compact on-chip inductors with deep-shrunk dimension of 22 /spl mu/m/spl times/23 /spl mu/m, as opposed to several hundreds /spl mu/m by several hundreds gm, is reported. Implemented in a 6-metal all-copper 0.18 /spl mu/m CMOS process, a flat inductor value of 10 nH up to 4 GHz, satisfactory to many typical RFIC applications, is achieved. The aggressive shrinkage reduces parasitic capacitance substantially and makes it realistic and cost-effective to realize single-chip RFICs in very deep sub-micron technologies. A new inductor model is proposed for accuracy. A 2.4 GHz LNA circuit with on-chip matching using the compact inductor is demonstrated.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"72 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123526463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Soft breakdown and hot carrier reliability of CMOS RF mixer and redesign CMOS射频混频器的软击穿和热载流子可靠性及重新设计
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/RFIC.2002.1012076
Qiang Li, Wei Li, Jinlong Zhang, J. Yuan
{"title":"Soft breakdown and hot carrier reliability of CMOS RF mixer and redesign","authors":"Qiang Li, Wei Li, Jinlong Zhang, J. Yuan","doi":"10.1109/RFIC.2002.1012076","DOIUrl":"https://doi.org/10.1109/RFIC.2002.1012076","url":null,"abstract":"In this paper, CMOS RF down-conversion mixer circuit hot-carrier (HC) and soft breakdown (SBD) reliability estimation and redesign is presented. First of all, MOS transistor reliability under analog operation was evaluated by experiment. The mixer circuit operation conditions for the occurrence of HC and SBD are analyzed, and circuit performance model are presented to relate the device degradation to circuit performance degradation. Finally, we propose mixer circuit redesign strategies, which reduce the HC and SBD problem. Simulation shows improved noise performance with the similar gain, IIP3 and power consumption.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132333547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Octave tunable, highly linear, RC-ring oscillator with differential fine-coarse tuning, quadrature outputs and amplitude control for fiber optic transceivers 八度可调，高度线性，rc环振荡器与差分精细粗调谐，正交输出和幅度控制的光纤收发器
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI: 10.1109/MWSYM.2002.1011677
M. Sanduleanu, D. van Goor, H. Veenstra
{"title":"Octave tunable, highly linear, RC-ring oscillator with differential fine-coarse tuning, quadrature outputs and amplitude control for fiber optic transceivers","authors":"M. Sanduleanu, D. van Goor, H. Veenstra","doi":"10.1109/MWSYM.2002.1011677","DOIUrl":"https://doi.org/10.1109/MWSYM.2002.1011677","url":null,"abstract":"This paper presents a low-voltage, RC-ring oscillator for fiber optic transceivers (SDH/SONET applications). It has one octave coarse tuning range, differential tuning inputs, quadrature outputs and a linear fine-control. A replica biasing circuit regulates the common-mode voltage and the amplitude at the output. The oscillator has been realized in a pre-production 70 GHz f/sub T/, SiGe BiCMOS process (QUBIC4G). The tuning range covered with process and temperature variations is 3.4-6.8 GHz. At 6.6 GHz oscillation frequency the measured phase noise is -92 dBc/Hz at 3 MHz; offset from the carrier. The typical power consumption of the VCO core is 80 mW from a 2.5 V power supply and the area is 0.3 mm/sup 2/.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121579697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer 高q铜电感在标准硅衬底与低k BCB介电层
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 1900-01-01 DOI: 10.1109/mwsym.2002.1011669
X. Huo, K.J. Chen, P. Chan
{"title":"High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer","authors":"X. Huo, K.J. Chen, P. Chan","doi":"10.1109/mwsym.2002.1011669","DOIUrl":"https://doi.org/10.1109/mwsym.2002.1011669","url":null,"abstract":"High-Q Cu inductors using low-k benzocyclobutene (BCB) dielectric as an interface layer have been fabricated on a standard CMOS-grade silicon substrate. Metal ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1 nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for a post-IC process for high-performance RFIC's and MMIC's.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121782282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance of a CMOS Bluetooth transceiver IC with copper RF passives 铜射频无源CMOS蓝牙收发器IC的性能
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 1900-01-01 DOI: 10.1109/mwsym.2002.1011672
M. Doan, Q. Yin, K. E. Sze, P. B. Khannur, S. Rustagi, S. Jinglin, Pang, D. Foo, A. Ajjikuttira
{"title":"Performance of a CMOS Bluetooth transceiver IC with copper RF passives","authors":"M. Doan, Q. Yin, K. E. Sze, P. B. Khannur, S. Rustagi, S. Jinglin, Pang, D. Foo, A. Ajjikuttira","doi":"10.1109/mwsym.2002.1011672","DOIUrl":"https://doi.org/10.1109/mwsym.2002.1011672","url":null,"abstract":"On-chip copper inductors, MIM capacitors and precision resistors in a novel, low-cost process are described. A CMOS transceiver for Bluetooth was realized with these new RF passive components and compared with the same IC realized in a commercial 0.35 /spl mu/m CMOS process with Al metalization. In a low-noise amplifier (LNA), a gain improvement of around 5 dB and a noise-figure reduction of 1.2 dB were observed. For the image-reject mixer (IRM), the conversion gain improved by 3.5 dB. The output power of the power amplifier (PA) increased by 1.5 dB. For the phase locked loop (PLL) frequency synthesizer, the settling time was reduced to almost half.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134233115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of dummy patterns and substrate on spiral inductors for sub-micron RF ICs 虚拟模式和衬底对亚微米射频集成电路螺旋电感的影响
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 1900-01-01 DOI: 10.1109/rfic.2002.1012081
Jae-Hong Chang, Yong-Sik Youn, Hyun-Kyu Yu, C. Kim
{"title":"Effects of dummy patterns and substrate on spiral inductors for sub-micron RF ICs","authors":"Jae-Hong Chang, Yong-Sik Youn, Hyun-Kyu Yu, C. Kim","doi":"10.1109/rfic.2002.1012081","DOIUrl":"https://doi.org/10.1109/rfic.2002.1012081","url":null,"abstract":"In today's sub-micron CMOS technologies, dummy patterns are necessary to obtain the desired metal density for uniform etching. This paper shows the effect of the dummy patterns on the quality factor of the inductor. The effects of the polysilicon ground shield and p-doped substrate on inductor performance have also been investigated. As the distance of between dummy and inductor is increased, the quality factor is less influenced by eddy current loss due to the dummy. Also we can achieve Q = 13 at 3 GHz and L = 6.05 nH using a patterned ground shield with slotted polysilicon layers in a commercial standard 0.18 /spl mu/m CMOS technology.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131609308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel BiCMOS compatible, short channel LDMOS technology for medium voltage RF & power applications 新颖的BiCMOS兼容，短通道LDMOS技术中压射频和电源应用
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 1900-01-01 DOI: 10.1109/rfic.2002.1012051
A. Litwin, O. Bengtsson, J. Olsson
{"title":"Novel BiCMOS compatible, short channel LDMOS technology for medium voltage RF & power applications","authors":"A. Litwin, O. Bengtsson, J. Olsson","doi":"10.1109/rfic.2002.1012051","DOIUrl":"https://doi.org/10.1109/rfic.2002.1012051","url":null,"abstract":"We describe a very short channel, 0.15 /spl mu/m, LDMOS transistor, with a breakdown voltage of up to 45 V, manufactured in a standard 0.35 /spl mu/m BiCMOS process. At 1900 MHz and a 12 V supply voltage the 0.4 mm gate width device gives 100 mW output power P/sub 1 dB/ at a drain efficiency of 43%. It has a transducer power gain of more than 20 dB and a current gain cutoff frequency, f/sub T/, of 13 GHz. The maximum available gain cutoff frequency, f/sub MAX/ is 27 GHz. The LDMOS process module does not affect the performance or models of other devices. We present for the first time a simple way to create high voltage, high performance LDMOS transistors for RF power amplifier use even in a very downscaled silicon technology.","PeriodicalId":299621,"journal":{"name":"2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125058944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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