Soft breakdown and hot carrier reliability of CMOS RF mixer and redesign

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI:10.1109/RFIC.2002.1012076

Qiang Li, Wei Li, Jinlong Zhang, J. Yuan

引用次数: 20

Abstract

In this paper, CMOS RF down-conversion mixer circuit hot-carrier (HC) and soft breakdown (SBD) reliability estimation and redesign is presented. First of all, MOS transistor reliability under analog operation was evaluated by experiment. The mixer circuit operation conditions for the occurrence of HC and SBD are analyzed, and circuit performance model are presented to relate the device degradation to circuit performance degradation. Finally, we propose mixer circuit redesign strategies, which reduce the HC and SBD problem. Simulation shows improved noise performance with the similar gain, IIP3 and power consumption.

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CMOS射频混频器的软击穿和热载流子可靠性及重新设计

本文研究了CMOS射频下变频混频器电路的热载波(HC)和软击穿(SBD)可靠性估计和重新设计。首先，通过实验对MOS晶体管在模拟操作下的可靠性进行了评价。分析了混频器电路中HC和SBD发生的运行条件，并建立了电路性能模型，将器件退化与电路性能退化联系起来。最后，我们提出了混频器电路的重新设计策略，以减少HC和SBD问题。仿真结果表明，在相同的增益、IIP3和功耗下，噪声性能得到了改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)

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