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2-BIT Pass-Transistor Logic Potentiometric DAC using 0.15um CMOS Technology 采用0.15um CMOS技术的2位通管逻辑电位DAC
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032863
Souvik Chatterjee, Hasanujjaman
{"title":"2-BIT Pass-Transistor Logic Potentiometric DAC using 0.15um CMOS Technology","authors":"Souvik Chatterjee, Hasanujjaman","doi":"10.1109/EDKCON56221.2022.10032863","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032863","url":null,"abstract":"Nowadays we need a high-frequency digital circuit that can operate with high accuracy, high speed, and low power for required applications. A 2-bit DIGITAL TO ANALOG CONVERTER(DAC) using PASS-TRANSISTOR logic is presented in this paper to analyze accuracy, linearity, and speed. For accurate DAC operation, integral nonlinearity must be less. This paper introduces a 2-bit DAC format using 150 nm CMOS technology using PASSS TRANSISTOR logic as a switch. TANNER EDA tool is used to simulate the proposed design.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128306347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing 用于可靠无标记生物传感的InGaN缺口介质调制双通道GaN MOSHEMT的CV分析和线性性能
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032882
Girish Shankar Mishra, N. Mohankumar, S. K. Singh, M. Vamsi, Dola Sainath Reddy
{"title":"CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing","authors":"Girish Shankar Mishra, N. Mohankumar, S. K. Singh, M. Vamsi, Dola Sainath Reddy","doi":"10.1109/EDKCON56221.2022.10032882","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032882","url":null,"abstract":"In this paper, we have demonstrated the effect of InGaN notch on device reliability, including CV analysis and linearity analysis of an AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor). Especially, Al2O3 dielectric-based dual channel (DH) MOSHEMT has shown tremendous improvement in drive current, linearity, and transconductance behavior because of low leakage and high scalability. In the proposed device structure, better linearity parameters such as higherorder transconductance (gm2), and interception points (VIP2) are explored for drain-to-source voltage (VDS) of 1 V with and without the presence of biomolecules under the gate electrode. All simulation has been carried out on the Sentaurus TCAD simulator. The simulation results clearly predict the reliability of the device for accurate label-free biosensing.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134543844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical Modeling of Asymmetric Gate Stack Junctionless Dual Material Surrounding Gate MOSFET for Enhanced Hot Carrier Reliability 提高热载流子可靠性的非对称栅极堆无结双材料围绕栅极MOSFET的解析建模
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032874
A. Basak, A. Sarkar
{"title":"Analytical Modeling of Asymmetric Gate Stack Junctionless Dual Material Surrounding Gate MOSFET for Enhanced Hot Carrier Reliability","authors":"A. Basak, A. Sarkar","doi":"10.1109/EDKCON56221.2022.10032874","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032874","url":null,"abstract":"The analytical modelling of asymmetric gate stack junctionless dual material surrounding gate (AGSJLDMSG) MOSFET was suggested in this article to enhance hot carrier reliability. The innovative construction is focused on an asymmetric gate stack design that combines two distinct high K dielectrics at the source and drain sides, which dramatically decreases electric field and drain induced barrier lowering (DIBL). A comparative evaluation of short channel effects (SCEs) among this innovative structure and various earlier architectures was performed. Surface potential, electric field, DIBL, subthreshold slop, subthreshold drain current (Id), and transconductance (gm) have all been examined as figure of merit (FOM) measures. The results show that the high K dielectric on the drain side increases immunity to hot carrier generated damage and the analog/RF properties. The ATLAS device simulator was used to run the simulations.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124945919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and implementation of RFID based tracking algorithm for tracing the chicken suspected to be infected by Avian Influenza 基于RFID的禽流感疑似感染鸡跟踪算法的设计与实现
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032949
Anibrata Ghosh, Sananda Pal, K. Kumari, Saumendra N. Sarkar
{"title":"Design and implementation of RFID based tracking algorithm for tracing the chicken suspected to be infected by Avian Influenza","authors":"Anibrata Ghosh, Sananda Pal, K. Kumari, Saumendra N. Sarkar","doi":"10.1109/EDKCON56221.2022.10032949","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032949","url":null,"abstract":"The development of social services and enhancement of the living standards has made it an urgent need for a way to adapt to the complex situation of the new positioning technology. Also, data transmission is very important from one portable device to another in a secured manner with control on data communication. Radio Frequency Identification is the next generation wireless communication technology. RFID is a noncontact technology that identifies objects that are attached with tags. In this paper, a programming model of RFID based tracking system is designed to catch dynamic objects like the suspected hens which are affected by the Avian-influenza virus. This is done by developing an algorithm for RFID based tracking system and implementing it through python. Results of the proposed system using simulated environment are found to be satisfactory.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130496706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gene Co expression analysis for identifying some regulatory genes in human lung cancer 基因Co表达分析鉴定人肺癌调控基因
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032946
S. Hazra, Amit Kumar Shaw, Palash Das, A. Ghosh
{"title":"Gene Co expression analysis for identifying some regulatory genes in human lung cancer","authors":"S. Hazra, Amit Kumar Shaw, Palash Das, A. Ghosh","doi":"10.1109/EDKCON56221.2022.10032946","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032946","url":null,"abstract":"Cancer occurs owing to significant variances in the gene expression level. Like all cancer lung cancer is the result of abnormalities in the regulatory systems of genes. It is evident that, gene expression systems can successfully frame phenotypes. Hence, it is important to analyze co expressed genes that could shed light on the fundamental principles governing the transcriptional regulatory processes influencing tumor formation and evolution. Oligonucleotide microarray and sequencing technology advancements have made it possible to quickly monitor the expression of genes in different tissues, providing a great mechanism in cancer research domain In the present article we have designed an algorithm which is focused on analyzing the gene correlation values of human lung expression and studying the gene correlation network. The algorithm effectively identifies some regulatory genes having significant association with lung cancer.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"20 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121005637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multisubband Electron Mobility in Parabolic Coupled Double Quantum Well Structure 抛物耦合双量子阱结构中的多子带电子迁移率
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032897
A. K. Sahu, N. Sahoo
{"title":"Multisubband Electron Mobility in Parabolic Coupled Double Quantum Well Structure","authors":"A. K. Sahu, N. Sahoo","doi":"10.1109/EDKCON56221.2022.10032897","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032897","url":null,"abstract":"We compute numerically electron mobility µ as a function of applied electric field F for different doping concentrations N<inf>d</inf> in Al<inf>0.3</inf>Ga<inf>0.7</inf>As parabolic coupled double quantum well (PCDQW) structure. Here, we consider the effect of ionized impurity (ii-) and alloy disorder (al-) scattering and analyze their respective mobilities µ<sup>ii</sup> and µ<sup>al</sup>. We show that as |F| increases from 0 kV/cm, µ enhances and becomes maximum, again decreasing till the end of double subband occupancy. As N<inf>d</inf> increases µ<sup>ii</sup> enhances but µ<sup>al</sup> decreases at a higher rate as compared to µ<sup>ii</sup> resulting reduction in µ during single subband occupancy for the higher value of doping concentrations.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122527821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Review on Wide Band Gap Semiconductor 宽带隙半导体研究进展
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032898
Arnima Das, M. Kanjilal, M. Mukherjee, Arpita Santra
{"title":"Review on Wide Band Gap Semiconductor","authors":"Arnima Das, M. Kanjilal, M. Mukherjee, Arpita Santra","doi":"10.1109/EDKCON56221.2022.10032898","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032898","url":null,"abstract":"Wide Band Gap semiconductor materials have recently attracted the attention of the researchers for developing future energy saving society, by designing efficient switch, attenuator and power electronic devices. The large band difference of the wide band gap materials allows the designer to develop high frequency, high power, short wavelength application-based devices, which shows thermal stability in high temperature, too. Among different wide band gap materials SiC and GaN are commonly used materials for developing high quality, crack free surface of the device as their matching substrates are commonly available in the market. On the other hand, some other wide Band Gap materials like diamond, Graphene, AlN, BN, CuO, ZnO have also come in focus due to their promising functions, especially for power-device applications. In some literature review, it has been found that device characteristics obtained from these materials are quite comparable with the traditional Si based devices, and in some cases these new material shows better performance than Si. Though, some unknown defects and interface properties may be associated with these materials, which can be addressed after a thorough survey of their functions.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123906859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a Highly Directive, Wideband and Compact Endfire Antenna Array for 5G Applications 面向5G应用的高指令、宽带、紧凑型端火天线阵列设计
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032873
Sagar Juneja, R. Pratap, Rajnish Sharma
{"title":"Design of a Highly Directive, Wideband and Compact Endfire Antenna Array for 5G Applications","authors":"Sagar Juneja, R. Pratap, Rajnish Sharma","doi":"10.1109/EDKCON56221.2022.10032873","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032873","url":null,"abstract":"Antenna array implementation becomes a necessary requirement for millimeter wave (mmW) 5G applications for improving the directivity to overcome the limitations of high attenuation losses at mmW frequencies. In this work, a compact 1X4 linear endfire antenna array has been designed using a full corporate feeding network for operation at 28 GHz frequency. The antenna element in the proposed array is a modified antipodal Vivaldi antenna, which has been designed by incorporating corrugations and metal director to achieve the size reduction and improve the radiation parameters. This compact antenna array has dimensions of 35.3 X 36.6 mm, peak gain of 13.67 dBi, and wide impedance bandwidth in the range of 24.3 GHz to 34 GHz, making it ideal for implementation in 5G cellular applications.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115239768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Doping induced threshold voltage and ION/IOFF ratio modulation in surrounding gate MOSFET for analog applications 环栅MOSFET模拟应用中掺杂诱导阈值电压和离子/IOFF比调制
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032940
Amit Das, B. Kanaujia, S. Deswal, Sonam Rewari, R. Gupta
{"title":"Doping induced threshold voltage and ION/IOFF ratio modulation in surrounding gate MOSFET for analog applications","authors":"Amit Das, B. Kanaujia, S. Deswal, Sonam Rewari, R. Gupta","doi":"10.1109/EDKCON56221.2022.10032940","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032940","url":null,"abstract":"This paper gives a detailed and comprehensive insight for the simulation based investigation of doping induced modulation of the threshold voltage and I<inf>ON</inf>/I<inf>OFF</inf> ratio in a silicon based surrounding gate metal oxide semiconductor field effect transistor (SG-MOSFET). This work explores the two important DC characteristics i.e. threshold voltage and I<inf>ON</inf>/I<inf>OFF</inf> ratio which are important to investigate the analog performance of MOSFET. The current study shows that the low doping of source, channel and drain results in low threshold voltage but also, decreases the I<inf>ON</inf>/I<inf>OFF</inf> ratio. Interestingly, keeping the drain doping higher than the source doping improves the threshold voltage but degrades the I<inf>ON</inf>/I<inf>OFF</inf> ratio. The maximum change in threshold voltage and I<inf>ON</inf>/I<inf>OFF</inf> ratio is approximately 430 mV and 10<sup>6</sup> times respectively which is obtained when the doping of the source, channel and drain are changed simultaneously by a factor of 1:10<sup>6</sup>. The doping of source, channel and drain can significantly affect the threshold voltage and I<inf>ON</inf>/I<inf>OFF</inf> ratio in short channel devices which necessitates the need of doping optimization to control both these characteristics.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131572841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
EDKCON 2022 Cover Page EDKCON 2022封面页
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/edkcon56221.2022.10032966
{"title":"EDKCON 2022 Cover Page","authors":"","doi":"10.1109/edkcon56221.2022.10032966","DOIUrl":"https://doi.org/10.1109/edkcon56221.2022.10032966","url":null,"abstract":"","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115924916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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