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Drain Engineered Charge Plasma-based Vertical TFET for Improved Device Performance 改进器件性能的基于漏极工程电荷等离子体的垂直TFET
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032929
Sivaramakrishna G, C. Pandey
{"title":"Drain Engineered Charge Plasma-based Vertical TFET for Improved Device Performance","authors":"Sivaramakrishna G, C. Pandey","doi":"10.1109/EDKCON56221.2022.10032929","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032929","url":null,"abstract":"This article proposes a drain engineering technique-based Doping-less TFET with an inverted T-shape channel. To develop charge carriers in the source and drain area, metals having a certain work function are placed above these regions. Spacers are kept between the source and gate for providing isolation. The inverted T-shaped channel of the proposed device is formed by a pair of drain regions, and the source is extended vertically on the top. Because of the inverted T-shape channel, ON-state current (ION) is significantly improved in the proposed device. 2D TCAD Simulation results show that OFF-state leakage current is also reduced when it is compared with the Conventional doping-less TFET, which mainly happens because of the drain engineering technique used in the proposed device.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127266076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Data Compression of Photoplethysmogram Signal for IoT Application 物联网应用中光电容积图信号的数据压缩
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032860
Rashmibala Sahoo, Aniket Lala, P. Kundu, Sudipta Ghosh
{"title":"Data Compression of Photoplethysmogram Signal for IoT Application","authors":"Rashmibala Sahoo, Aniket Lala, P. Kundu, Sudipta Ghosh","doi":"10.1109/EDKCON56221.2022.10032860","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032860","url":null,"abstract":"Cardiovascular diseases (CVD) or abnormalities are the leading causes of mortality in today’s era throughout the world. A human life can be saved on proper time, if they are diagnosed with diseases at the earliest. The major popular modalities in monitoring the electrical activity of the heart using the Electrocardiogram (ECG), the Phonocardiogram (PCG), and the Photoplethysmogram (PPG). Electrocardiogram (ECG) readings with sophisticated signal processing tools hinders because of non-portability. Whereas, PPG has become increasingly common due to its low cost, wireless capabilities, and relatively small size and optical nature. Including normal patient, Cardiac dis-order such as hypertension, ischemic heart disease, myocardial infarction, among others, disrupts the body’s volumetric blood flow rate. The work proposes a revolutionary strategy to utilize the IoT-based platform to download and access the vast amount of bio signals data effectively using data-compression technique to save time and cost without compromising accuracy. The solution is the implementation of Gaussian and Fourier models of the PPG datasets and, after that, compression of each model parameter. The enormous data set of various cardiac patients contains some vital information for which the implementation of such a robust data compression tool or data compression mechanism is necessary. So, the information can be accessed from anywhere in the world with a high-speed internet connection and with the specific settings for (Unique Patient ID) for PPG monitoring.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122499437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance of vertical Van der Waals JLFET in 8nm channel length 垂直范德华JLFET在8nm通道长度下的性能
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032886
P. K. Sanda, Anup Dey, R. Dhar
{"title":"Performance of vertical Van der Waals JLFET in 8nm channel length","authors":"P. K. Sanda, Anup Dey, R. Dhar","doi":"10.1109/EDKCON56221.2022.10032886","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032886","url":null,"abstract":"Two-dimensional materials are very promising for ultra-short channel future devices. Black phosphorus has a layered structure like graphene that makes it possible to dynamically separate ultrathin single crystals or make into a monolayer material. In this paper, we investigate the performance of Junction less field effect transistor (JLFET) made up of monolayer black phosphorus (BP) with van der Waals vertical overlap at 8nm gate length by using ab initio quantum transport calculation. Our studies reveal that BP JLFET can fulfill the requirement of International Roadmap for Devices and Systems (IRDS 2021) requirement for 2028 in terms of High Power (HP) and Low Power (LP) applications. In the proposed vertical BP-JLFET, the minimum SS is obtained as 72mV/dec. which is near that optimum value. It is also found that the performance of BP JLFET outperforms the corresponding BP MOSFET.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122731468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parametric Analysis of Wideband Substrate Integrated Waveguide Structure with Negligible Loss for High Power Application 高功率可忽略损耗的宽带基板集成波导结构参数分析
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032866
P. Debnath, Ujjwal Mondal, A. Deyasi
{"title":"Parametric Analysis of Wideband Substrate Integrated Waveguide Structure with Negligible Loss for High Power Application","authors":"P. Debnath, Ujjwal Mondal, A. Deyasi","doi":"10.1109/EDKCON56221.2022.10032866","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032866","url":null,"abstract":"Substrate integrated waveguide with insignificant loss is theoretically designed at X and Ku band with cutoff frequency 9.16 GHz. Very high return loss speaks in favor of the proposed design, and that is also increasing as progressed towards X to Ku band. Impedance variation with wavelength exhibits monotonic decreasing behavior for different effective width, which voices for higher width within practical range of interest for higher output current. Substrate material plays vital role in tailoring the impedance of the structure, and therefore essential prior to fabrication for specific application. Restrained TE10 mode reveals the fact of negligible leakage current, essential for high power application.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131267839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel 2D Mapping Scheme for Nearest Neighbor Design of Quantum Circuits 量子电路最近邻设计的一种新的二维映射方案
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032881
Subham Kumar, Anirban Bhattacharjee, Sudip Ghosh, H. Rahaman
{"title":"A Novel 2D Mapping Scheme for Nearest Neighbor Design of Quantum Circuits","authors":"Subham Kumar, Anirban Bhattacharjee, Sudip Ghosh, H. Rahaman","doi":"10.1109/EDKCON56221.2022.10032881","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032881","url":null,"abstract":"In the last few years, quantum computing has gained the attention of the researchers due to its ability to perform parallel and exponentially faster computation over classical computing. One of the prominent challenges for quantum circuits is to satisfy the nearest neighbor (NN) condition, i.e., the qubits of the computing gate must be placed adjacent. Based on this fact, here, in this paper, we have proposed a heuristic synthesis workflow to realize NN circuits in 2D grid configuration. The implemented approach has been evaluated over a broad range of benchmark circuits and we have reported the best results. To validate the efficiency of the stated approach, we have compared it with the previously reported works, an average improvement of 15.94%, 8.89% and 10.98% are obtained over the existing 2D works, and 44.72% and 70.35% are obtained over existing 1D works, respectively.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132009090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analog and RF Performance Analysis of SiO2/HfO2 Dual Dielectric Gate All Around Vertically Stacked Nanosheet FET for 5nm Technology Node 5nm工艺节点SiO2/HfO2双介电栅垂直堆叠纳米片场效应晶体管模拟及射频性能分析
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032848
Ram Krishna Dewangan, Vinay Kumar Singh, Mohammad Rafique Khan
{"title":"Analog and RF Performance Analysis of SiO2/HfO2 Dual Dielectric Gate All Around Vertically Stacked Nanosheet FET for 5nm Technology Node","authors":"Ram Krishna Dewangan, Vinay Kumar Singh, Mohammad Rafique Khan","doi":"10.1109/EDKCON56221.2022.10032848","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032848","url":null,"abstract":"In this paper, gate all around vertically stacked triple nanosheet field effect transistor are explored for analog and radio frequency performance for 5nm technology node. Dual dielectric SiO2/HfO2 structure provides superior electrical properties with improved immune to leakage current and better electrostatics at channel region. Major figure of merit such as transconductance (gm), transconductance generation factor (TGF), output conductance (gds), intrinsic gain (Av0), cut-off frequency (fT) and transconductance frequency product (TFP) are investigated by varying the width of nanosheet from 10nm to 30nm. Nanosheet provides high on-current of 61.7µA, low leakage current of 20.6x10-12A, high transconductance (gm = 3.2x10-4 S), high transconductance generation efficiency (TGF) and high gain (Av0 = 47dB), cut off frequency (fT=394GHz), better Maximum oscillation frequency (Fmax=491GHz) and Low parasitic capacitance (Cgs and Cgd). The device gives excellent off state characteristics and shows promising results for sub-5nm technology node than FinFET. It can be recognized as next generation device and strong potential candidate for low power and high frequency application in terahertz RF band.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132901435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ab-initio Study Based Understanding of Pnictogen Trihydrides Adsorption on WS2 Monolayer 基于Ab-initio研究的WS2单层吸附三氢化烟碱的研究
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032932
M. Akhtar, P. Bhattacharyya
{"title":"Ab-initio Study Based Understanding of Pnictogen Trihydrides Adsorption on WS2 Monolayer","authors":"M. Akhtar, P. Bhattacharyya","doi":"10.1109/EDKCON56221.2022.10032932","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032932","url":null,"abstract":"The work in this paper mainly focuses on the adsorption possibility of some pnictogen trihydride based highly toxic gas molecules such as NH<inf>3</inf>, PH<inf>3</inf>, AsH<inf>3,</inf> and SbH<inf>3</inf> towards 2D layered transition metal dichalcogenides (TMDs) based pristine WS<inf>2</inf> monolayer using density functional theory incorporated with QuantumATK atomistic toolkit. To explore the sensing performance and electronic properties of pristine WS<inf>2</inf> monolayer towards above mentioned gas molecules, geometrical parameters, adsorption energy, charge transfer mechanism, adsorption distance, and projected density of states were studied and discussed. The outcome of the study suggested that the WS<inf>2</inf> monolayer allowed all gases to be adsorbed and the comparative adsorption probability was found to be maximum for NH<inf>3</inf> gas molecule with highest adsorption magnitude of -0.308 eV. The maximum charge transfer was found in NH<inf>3</inf>-WS<inf>2</inf> interaction. The second most adsorbed gas molecule on WS<inf>2</inf> monolayer was PH<inf>3</inf>. The lowest gas adsorption possibility was found for SbH<inf>3</inf> molecule with the adsorption magnitude of -0.185 eV which was around 66% lesser than the adsorption possibility of NH<inf>3</inf> molecule on WS<inf>2</inf> monolayer. SbH<inf>3</inf> gas molecule was adsorbed with highest adsorption distance among other pnictogenic gas molecules. No covalent bonds were formed after adsorption of gas molecules on WS<inf>2</inf> monolayer where the adsorptions mainly occurred due to the association of weak van der Waals forces.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"264 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114410516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
QCA based Majority Voter Design using IBMQ 使用IBMQ的基于QCA的多数投票人设计
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032827
Arpita Kundu, J. Das, D. De
{"title":"QCA based Majority Voter Design using IBMQ","authors":"Arpita Kundu, J. Das, D. De","doi":"10.1109/EDKCON56221.2022.10032827","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032827","url":null,"abstract":"Quantum technology application is a rapidly developing discipline in future-generation research. It has grown its appeal due to several unique aspects which cannot be encountered in classical domains. Quantum properties can be used to create powerful and effective technology. The processing capability of a quantum computer is triggered by managing quantum particles in a quantum computer, which improves transformation in many domains. Quantum logic operations have the significant benefit of being reversible. Unlike classical irreversible processing, quantum logic gates are reversible and unitary, allowing input bits to be recovered via a one-to-one connection between input and output bits. In QCADesigner, as well as in the Quantum environment, different reversible logic gates may be constructed. Some other promising features include Superposition (Quantum Parallelism), Entanglement, etc. This study uses IBM quantum to create the QCA-based Majority voter gate.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116736541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
ZnO Homojunction Based BTX Vapor Sensor Device 基于ZnO同质结的BTX蒸汽传感器装置
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032915
I. Sil, P. Bhattacharyya
{"title":"ZnO Homojunction Based BTX Vapor Sensor Device","authors":"I. Sil, P. Bhattacharyya","doi":"10.1109/EDKCON56221.2022.10032915","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032915","url":null,"abstract":"In the present work ZnO homojunction based vapor sensor device for the detection of benzene, toluene and xylene at room temperature is reported. ZnO homojunction is fabricated by depositing p-type (sodium doped) ZnO nanoparticles on top of ntype ZnO nanotube. FESEM images authenticated the formation of nanostructured nanotubes and nanoparticles. The current-voltage characteristic of the homojunction showed rectifying characteristics in presence of target vapors and air. The homojunction device was able to detect even low ppm (5 ppm) of benzene vapor with a good selectivity with its other interfering species (toluene and xylene) at room temperature owing to the advantage provided by formation of device junction. The homojunction device also demonstrated a good selectivity of benzene in comparison with its other interfering species (toluene and xylene) in low concentration range (5 – 50 ppm).","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116827860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga2O3 Nano-HEMT 后势垒对iii -氮化物/β-Ga2O3纳米hemt性能增强的影响
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032868
G. Rao, Nistha Baruah, T. Lenka, Rajan Singh, N. Boukortt, H. Nguyen
{"title":"The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga2O3 Nano-HEMT","authors":"G. Rao, Nistha Baruah, T. Lenka, Rajan Singh, N. Boukortt, H. Nguyen","doi":"10.1109/EDKCON56221.2022.10032868","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032868","url":null,"abstract":"In this research article, the influence of AlGaN back-barrier on the device performance has been analyzed. The study has been conducted based on the effect on the breakdown characteristics and RF performance. The inclusion of back barrier helps to raise conduction band, which diminishes the leakage path below the buffer layer and also helps to contain the 2DEG in the narrow channel. Furthermore, the RF performance is improved by mitigating the conduction losses and short channel effects. The device having the features of Si3N4 passivation, recessed gate structure and the substrate used is β-Ga2O3. The enhancement in breakdown voltage, RF performance (fT & fmax) with the presence of AlGaN back barrier in proposed III-Nitride Nano-HEMT on the preferred β-Ga2O3 is observed in both the cases of with & without field-plate. So, the future of HEMT technology is promising with the ongoing improvements to fulfil operational needs.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132054755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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