Performance of vertical Van der Waals JLFET in 8nm channel length

Abstract

Two-dimensional materials are very promising for ultra-short channel future devices. Black phosphorus has a layered structure like graphene that makes it possible to dynamically separate ultrathin single crystals or make into a monolayer material. In this paper, we investigate the performance of Junction less field effect transistor (JLFET) made up of monolayer black phosphorus (BP) with van der Waals vertical overlap at 8nm gate length by using ab initio quantum transport calculation. Our studies reveal that BP JLFET can fulfill the requirement of International Roadmap for Devices and Systems (IRDS 2021) requirement for 2028 in terms of High Power (HP) and Low Power (LP) applications. In the proposed vertical BP-JLFET, the minimum SS is obtained as 72mV/dec. which is near that optimum value. It is also found that the performance of BP JLFET outperforms the corresponding BP MOSFET.