Drain Engineered Charge Plasma-based Vertical TFET for Improved Device Performance

This article proposes a drain engineering technique-based Doping-less TFET with an inverted T-shape channel. To develop charge carriers in the source and drain area, metals having a certain work function are placed above these regions. Spacers are kept between the source and gate for providing isolation. The inverted T-shaped channel of the proposed device is formed by a pair of drain regions, and the source is extended vertically on the top. Because of the inverted T-shape channel, ON-state current (ION) is significantly improved in the proposed device. 2D TCAD Simulation results show that OFF-state leakage current is also reduced when it is compared with the Conventional doping-less TFET, which mainly happens because of the drain engineering technique used in the proposed device.