Analog and RF Performance Analysis of SiO2/HfO2 Dual Dielectric Gate All Around Vertically Stacked Nanosheet FET for 5nm Technology Node

In this paper, gate all around vertically stacked triple nanosheet field effect transistor are explored for analog and radio frequency performance for 5nm technology node. Dual dielectric SiO2/HfO2 structure provides superior electrical properties with improved immune to leakage current and better electrostatics at channel region. Major figure of merit such as transconductance (gm), transconductance generation factor (TGF), output conductance (gds), intrinsic gain (Av0), cut-off frequency (fT) and transconductance frequency product (TFP) are investigated by varying the width of nanosheet from 10nm to 30nm. Nanosheet provides high on-current of 61.7µA, low leakage current of 20.6x10-12A, high transconductance (gm = 3.2x10-4 S), high transconductance generation efficiency (TGF) and high gain (Av0 = 47dB), cut off frequency (fT=394GHz), better Maximum oscillation frequency (Fmax=491GHz) and Low parasitic capacitance (Cgs and Cgd). The device gives excellent off state characteristics and shows promising results for sub-5nm technology node than FinFET. It can be recognized as next generation device and strong potential candidate for low power and high frequency application in terahertz RF band.