Multisubband Electron Mobility in Parabolic Coupled Double Quantum Well Structure

We compute numerically electron mobility µ as a function of applied electric field F for different doping concentrations Nd in Al0.3Ga0.7As parabolic coupled double quantum well (PCDQW) structure. Here, we consider the effect of ionized impurity (ii-) and alloy disorder (al-) scattering and analyze their respective mobilities µⁱⁱ and µ^al. We show that as |F| increases from 0 kV/cm, µ enhances and becomes maximum, again decreasing till the end of double subband occupancy. As Nd increases µⁱⁱ enhances but µ^al decreases at a higher rate as compared to µⁱⁱ resulting reduction in µ during single subband occupancy for the higher value of doping concentrations.